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Taiwan Semiconductor High Voltage NPN Transistor TSC4505CX RFG, 300 mA, 400 V, 3-Pin SOT-23

Category Bipolar Transistors Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin Taiwan
Brand Taiwan Semiconductor
Height 1.3mm
Length 3.04mm
Model TSC4505CX RFG
Width 1.6mm
Mount Type Surface
Series TSC4505
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 400V
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 300mA
Transistor Configuration Single
Maximum Transition Frequency ft 10MHz

Key Features

  • Supports a maximum DC collector current of 300 mA.
  • Maximum collector emitter voltage is 400 V for high voltage applications.
  • Compact Surface-mount package type SOT-23 for PCB mounting.
  • Single type transistor configuration with NPN polarity.
  • Operates within temperatures from -55°C to 150°C.
  • Maximum power dissipation of 225 mW ensures reliable performance.
  • Maximum transition frequency of 10 MHz suitable for switching applications.
  • Minimum DC current gain (hFE) of 100 provides adequate amplification.

Product Description

Taiwan Semiconductor TSC4505CX RFG high voltage bipolar transistor is designed for electronic applications requiring robust switching and amplification capabilities. This NPN transistor supports a maximum collector current of 300 mA and voltage up to 400 V, making it ideal for power and signal conditioning circuits.

The transistor is housed in a compact 3-pin SOT-23 surface-mount package allowing efficient PCB assembly and space savings in electronic equipment. Its operating temperature range from -55°C to 150°C allows reliable function in a wide variety of industrial and commercial environments.

Featuring a single transistor configuration and a minimum current gain of 100, it ensures stable amplification for diverse circuit designs. The maximum power dissipation of 225 mW provides thermal robustness for moderate power applications.

With a transition frequency of 10 MHz, the TSC4505CX RFG transistor is suitable for switching and amplification at moderate frequencies. The device meets no special automotive or industrial approvals but provides solid general-purpose functionality.

Key features include a maximum collector-base voltage of 400 V and emitter-base voltage rating of 6 V. It is designed and manufactured in Taiwan, Province Of China, ensuring quality control and consistent performance.

Supports max DC collector current of 300 mA. Maximum collector-emitter voltage: 400 V. Surface mount SOT-23 package type. Single NPN transistor configuration. Wide operating temperature range from -55°C to 150°C. Max power dissipation: 225 mW.

Max transition frequency: 10 MHz. Minimum DC current gain (hFE): 100. Three-pin package with length 3.04 mm, width 1.6 mm, height 1.3 mm. Manufactured in Taiwan, Province Of China.

This transistor is suited for industrial electronic circuits, power management, signal amplification, and switching operations within medium frequency ranges. Its compact form factor and electrical ratings make it flexible for use in control systems, consumer electronics, and embedded designs.

Discover more semiconductors and Bipolar Transistors at EnvMart for your industrial and manufacturing electronics needs.

Taiwan Semiconductor High Voltage NPN Transistor TSC4505CX RFG, 300 mA, 400 V, 3-Pin SOT-23
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Frequently Asked Questions

The maximum DC collector current for this model is 300 mA.

It supports a maximum collector-emitter voltage of 400 V, suitable for high voltage applications.

This model comes in a compact 3-pin SOT-23 surface-mount package, ideal for PCB assembly.

The operating temperature range is from -55°C to 150°C, allowing reliable function in various environments.

It has a maximum power dissipation of 225 mW, which provides thermal robustness for moderate power applications.

The maximum transition frequency is 10 MHz, making it suitable for switching and amplification at moderate frequencies.

The minimum DC current gain (hFE) is 100, providing adequate amplification for circuit designs.

The dimensions of the SOT-23 package are 3.04 mm in length, 1.6 mm in width, and 1.3 mm in height.

This model features a single NPN transistor configuration, suitable for various electronic applications.

The maximum emitter-base voltage (VEBO) rating is 6 V.

It is suited for industrial electronic circuits, power management, signal amplification, and switching operations.

This transistor is manufactured in Taiwan, Province Of China, ensuring quality control and consistent performance.

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