Infineon CoolMOS C6 N-Channel MOSFET 38 A 650 V Enhancement 3-Pin TO-220 IPP60R099C6XKSA1

Infineon IPP60R099C6XKSA1 is a CoolMOS C6 N-Channel MOSFET designed for efficient power management in industrial, automotive, and electronic applications. This enhancement mode transistor supports a maximum continuous drain current of 38 A and withstands a drain-source voltage of up to 650 V. It utilizes the well-established TO-220 3-pin through-hole package, facilitating easy integration into various printed circuit boards.

Engineered with the CoolMOS C6 technology, this MOSFET offers reduced conduction losses improving overall system efficiency. The device tolerates gate-source voltages between -30 V and +30 V, providing robust switching performance. Operating temperature specifications from -55°C up to 150°C ensure reliability even in harsh conditions.

This MOSFET has a low maximum drain-source resistance of 99 mΩ, minimizing heat generation during high current loads. Typical gate charge is 119 nC at Vgs, allowing for fast switching speeds. The forward voltage of 0.9 V complements its high efficiency in power conversion applications.

Its compact dimensions (height 16.15 mm, length 10.65 mm, width 4.9 mm) and through-hole mounting style enable compatibility with standard industrial assembly processes. Although not certified with automotive standards, the device is suitable for a broad range of electronic components and power conversion circuits.

Common industrial applications include power supplies, motor controls, and switching regulators in heavy machinery, HVAC systems, renewable energy installations, and general industrial electronics. This MOSFET delivers reliable, high-performance switching to enhance the efficiency and durability of electrical systems.

The device features enhancement mode channel operation for reliable switching. Maximum power dissipation rating is 35 W, suitable for power management applications. Robust gate-source voltage tolerance of -30 V to +30 V ensures stable operation.

Designed with CoolMOS C6 series technology for high efficiency and low conduction losses. Compact dimensions aid integration into space-constrained designs. Suitable for through-hole mounting with 3-pin TO-220 package configuration.

Operating temperature range supports demanding thermal environments. Low maximum drain-source resistance reduces power loss during conduction. Explore more electronic components and power semiconductor solutions on EnvMart for your professional industrial needs.