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Infineon SIPMOS Type P-Channel MOSFET, 30 A Maximum Continuous Drain Current, 60 V Maximum Drain Source SPD30P06PGBTMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | SPD30P06PGBTMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
Key Features
- This MOSFET operates in enhancement mode providing reliable switching performance.
- Designed with a maximum power dissipation of 125 W for high efficiency.
- Equipped with a surface mount TO-252 package and 3 pins for integration.
- Automotive standard compliant with AEC-Q101 for reliable operation under harsh conditions.
- Supports a wide operating temperature range from -55°C up to 175°C.
- Has a maximum drain-source resistance of 75 milliohms ensuring low conduction losses.
- Typical gate charge of 32 nC allows for fast switching capabilities.
- Gate-source voltage rated from -20 V to +20 V ensuring protection and stable operation.
Product Description
Infineon SPD30P06PGBTMA1 SIPMOS Type P-Channel MOSFET is a robust discrete semiconductor device designed for reliable power switching applications in industrial, automotive, telecommunications, and e-mobility sectors.
This enhancement-mode MOSFET supports a maximum continuous drain current of 30 A and a maximum drain-source voltage of 60 V, making it suitable for moderate power control and switching circuits.
Featuring a surface mount TO-252 package with three pins, it is optimized for PCB integration with excellent thermal performance, capable of dissipating up to 125 W of power. It supports an extended operating temperature range from -55°C to 175°C, ensuring durability under demanding conditions.
The device complies with the AEC-Q101 automotive standard, confirming its quality and reliability for automotive industry applications. It has a low maximum drain-source resistance of 75 milliohms and a typical gate charge of 32 nanoCoulombs that enable fast switching and improved efficiency.
Gate voltage tolerance from -20 V to +20 V offers design flexibility and device protection, while its compact dimensions (6.73 mm length, 6.22 mm width, 2.41 mm height) help reduce PCB space.
This MOSFET operates in enhancement mode providing reliable switching performance. Designed with a maximum power dissipation of 125 W for high efficiency. Equipped with a surface mount TO-252 package and 3 pins for integration.
Automotive standard compliant with AEC-Q101 for reliable operation under harsh conditions. Supports a wide operating temperature range from -55°C up to 175°C. Has a maximum drain-source resistance of 75 milliohms ensuring low conduction losses.
Typical gate charge of 32 nC allows for fast switching capabilities. Gate-source voltage rated from -20 V to +20 V ensuring protection and stable operation. Compact dimensions: length 6.73 mm, width 6.22 mm, height 2.41 mm for space saving designs.
This Infineon power MOSFET is widely used in industrial power electronics, automotive control units, DC/DC converters, telecom infrastructure, and e-mobility systems. Explore additional MOSFETs and discrete semiconductor products at EnvMart for your advanced electronics design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 A.
It can handle a maximum drain-source voltage of 60 V.
This MOSFET is designed for a maximum power dissipation of 125 W.
The gate-source voltage is rated from -20 V to +20 V.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The maximum drain-source resistance is 75 milliohms.
The typical gate charge is 32 nC.
It supports an operating temperature range from -55°C to 175°C.
This model comes in a surface mount TO-252 package.
It complies with the AEC-Q101 automotive standard.
This MOSFET is commonly used in industrial power electronics, automotive control units, DC/DC converters, telecom infrastructure, and e-mobility systems.
This model is equipped with 3 pins for integration.
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