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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.15mm |
| Length | 10.65mm |
| Model | IPA50R199CPXKSA1 |
| Width | 4.85mm |
| Mount Type | Through Hole |
| Series | CoolMOS CP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 550V |
| Maximum Drain Source Resistance Rds | 199mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Infineon IPA50R199CPXKSA1 CoolMOS CP N-Channel MOSFET offers robust performance for power management in various industrial and electronic applications. It supports a maximum continuous drain current of 17 A and can withstand a drain-source voltage up to 550 V, making it ideal for high power converter circuits and motor control systems.
The device employs enhancement mode operation and is housed in a TO-220 FP package, facilitating easy through-hole mounting. Its low maximum drain-source resistance of 199 milliohms improves energy efficiency and reduces heat generation.
Engineered to tolerate a broad temperature range from -55°C to 150°C, this MOSFET is capable of reliable operation in harsh environments. It also features a typical gate charge of 34 nC at 10 V, which supports switching performance in high-frequency power supplies.
Applications include industrial automation where durable, high-current components are needed, switch-mode power supplies requiring efficient MOSFET switching, and motor controls demanding dependable power delivery.
Supports high power dissipation of 139 W suitable for challenging environments. Low Rds(on) at 199 milliohms for enhanced electrical efficiency. Wide operating temperature range from -55°C to 150°C for versatility. 3-pin TO-220 FP package ensures easy integration and mounting.
Maximum gate-source voltage tolerance between -30 V and +30 V enhances reliability. Typical gate charge of 34 nC at Vgs=10 V suitable for high-frequency operation. Enhancement mode operation optimizes switching characteristics.
For optimal performance and safety during installation, users should refer to detailed datasheet specifications. This MOSFET is well suited for manufacturing, electronics design, automation, and HVAC applications.
Browse more Infineon semiconductor components and advanced MOSFETs at EnvMart for reliable power management solutions.
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