Infineon CoolMOS C7 N-Channel MOSFET, 75 A, 700 V Enhancement Mode, 3-Pin TO-247 IPW65R019C7FKSA1

Infineon IPW65R019C7FKSA1 CoolMOS C7 N-Channel MOSFET is engineered to deliver high efficiency and reliability in power electronic circuits. With a maximum continuous drain current of 75 A and a drain-source voltage rating of 700 V, this enhancement mode MOSFET is ideal for demanding industrial, power management, and motor control applications.

The TO-247 package facilitates easy through-hole mounting and effective heat dissipation, capable of handling up to 446 W power dissipation while operating safely up to 150°C. Its compact size (16.13 mm length, 21.1 mm width, and 5.21 mm height) contributes to space-efficient PCB designs.

The device features a low drain-source on-resistance of 19 mΩ that minimizes conduction losses, enhancing overall energy efficiency. The typical gate charge of 215 nC at 15 V gate-source voltage allows for rapid switching, making it suitable for PWM and high-speed switching applications.

The IPW65R019C7FKSA1 also supports a maximum gate-source voltage of -30 V to +30 V, ensuring durability against gate voltage transients and spike conditions. With a forward voltage of 0.9 V, it reduces power losses in conduction mode.

This MOSFET is built for robust performance with a minimum operating temperature of -55°C, enabling operation in a wide range of environments. It is a non-automotive grade part originating from China.

The Infineon CoolMOS C7 family is renowned for delivering enhanced power density and efficiency, suitable for industrial power supplies, renewable energy systems, consumer electronics, and motor drives. This device complies with necessary semiconductor quality standards.

Features enhancement mode channel operation for efficient switching. Utilizes CoolMOS C7 series technology for low on-resistance and high power dissipation. Rated for maximum power dissipation of 446 W with operating temperature up to 150°C.

Designed for through-hole mounting with a compact footprint of 16.13 mm length, 21.1 mm width, and 5.21 mm height. Typical gate charge is 215 nC at Vgs of 15 V for fast switching applications. Maximum gate-source voltage rating is ±30 V ensuring robust gate control.

Forward voltage is 0.9 V supporting low conduction losses. Rated for a minimum operating temperature of -55°C for reliable performance in harsh environments. Explore more Infineon high-performance MOSFETs and power semiconductor solutions on EnvMart for your industrial and electronics needs.