Infineon CoolMOS CP N-Channel MOSFET, 16 A, 650 V Enhancement, 3-Pin TO-220 IPA60R199CPXKSA1

Infineon IPA60R199CPXKSA1 is a CoolMOS CP series N-Channel MOSFET designed for high-efficiency power switching and conversion in industrial and electronic applications. It features an enhancement mode channel with a maximum continuous drain current of 16 A and a drain-source voltage rating of 650 V, housed in a compact 3-pin TO-220 package suitable for through-hole mounting.

The device supports a wide temperature range from -55°C up to 150°C, making it reliable for harsh operating conditions. Its low gate charge of 32 nC and a maximum drain-source resistance of 199 mΩ contribute to energy-efficient switching and reduced conduction losses, enhancing overall system efficiency.

With a maximum power dissipation of 34 W and a maximum gate-source voltage rating of ±30 V, this MOSFET is robust, durable, and suitable for demanding industrial use cases including power supplies, motor drives, and converters.

Key features include its CoolMOS CP technology that delivers best-in-class performance with improved power density and reduced switching losses. The TO-220 package facilitates easy integration into electronic assemblies with reliable heat dissipation capabilities.

High-performance CoolMOS CP technology enhances efficiency. Suitable for power management applications in industrial and commercial equipment. Compact 3-Pin TO-220 package supports through-hole mounting. Wide operating temperature and durable design ensure long service life.

Low gate charge enables faster switching speeds. High maximum power dissipation and current rating for demanding loads. Carefully engineered for use in power conversion, automotive, and industrial environments.

This Infineon MOSFET is a reliable choice for engineers and designers aiming for improved efficiency and performance in electronic circuits. Explore more Infineon semiconductor products and MOSFET components at EnvMart for diverse industrial electronics needs.