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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 10.4mm |
| Length | 30.6mm |
| Model | STGF10NB60SD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | Low Drop |
| Energy Rating | 8mJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 29A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 80W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| Infineon IKA08N65H5XKSA1 IGBT, 10.8 A 650 V, 3-Pin TO-220FP, Through HoleBrand | Infineon |
STMicroelectronics STGF10NB60SD is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power applications requiring fast switching and high current capacity. It supports a maximum continuous collector current of 29A and a collector emitter voltage of 600V, making it suitable for industrial, automotive, and power electronics uses.
The device comes in a 3-pin TO-220FP package with through-hole mounting for easy PCB integration. It features a collector emitter saturation voltage of 1.75V and can safely operate in an ambient temperature range from -55°C up to 150°C. The package dimensions measure 30.6mm in length, 10.4mm in height, and 4.6mm in width.
With a switching speed of 3.8 microseconds and gate emitter voltage tolerance of ±20V, the STGF10NB60SD ensures swift response in power switching applications. This Low Drop series IGBT complies with RoHS standards, underscoring its environmental compliance.
This transistor is ideal for use in industrial power control circuits, motor drives, automotive power modules, and HVAC systems where reliable performance and efficiency are critical. The product is manufactured in China and has an energy rating of 8mJ.
This IGBT features a 3-pin through-hole mount for easy integration. It has a maximum collector emitter saturation voltage of 1.75V ensuring efficient operation. The device operates within a temperature range from -55°C to 150°C.
The robust packaging dimensions are 30.6mm length, 10.4mm height, and 4.6mm width. Designed for fast switching with a speed of 3.8 microseconds. Rated for a gate emitter voltage of ±20V for improved control. This Low Drop series complies with RoHS standards for environmental safety.
Manufactured in China with an energy rating of 8mJ.
Explore a wide array of power semiconductors and discrete components at EnvMart to find suitable IGBTs, MOSFETs, and bipolar transistors for your electrical and electronic design requirements.
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