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Infineon HEXFET N-Channel MOSFET 522 A 40 V Enhancement Mode Surface Mount TO-263 6-Pin IRFS7430TRL7PP
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS7430TRL7PP |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 522A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 750μΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 305nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- This N-Channel enhancement mode MOSFET offers extremely low on-resistance of 750 micro-ohms.
- Designed with HEXFET technology for reduced conduction losses and improved efficiency.
- Surface mount package type TO-263 supports compact and reliable PCB mounting.
- Maximum power dissipation capability is 375 W, suitable for high-power applications.
- Operating temperature range spans from -55°C to 175°C for industrial robustness.
- Features a typical gate charge of 305 nC at Vgs = 10 V for fast switching performance.
- Maximum gate-source voltage rating is ±20 V, ensuring safe drive conditions.
- Package dimensions approximately 10.67 mm length, 9.65 mm width, and 4.83 mm height.
Product Description
Infineon's IRFS7430TRL7PP is a HEXFET N-Channel MOSFET engineered to deliver superior performance in power electronics applications requiring efficient high current switching. Rated for a continuous drain current of 522 A and a drain-source voltage of 40 V, this device is designed with HEXFET technology to minimize conduction losses and enhance power efficiency.
In a standard surface mount TO-263 package with 6 pins, this MOSFET supports compact and reliable mounting for industrial, automotive, and power management use cases. The device has a very low on resistance of 750 micro-ohms which reduces power dissipation, complemented by a high maximum power dissipation of 375 W for robust operation in demanding scenarios.
With an extended operating temperature range from -55°C up to 175°C, it is suitable for harsh environments. The gate construction allows a maximum gate-source voltage of ±20 V and features typical gate charge of 305 nC, enabling fast switching essential for power conversion and motor driver circuits.
This component is ideal for applications in industrial power supplies, automotive electronics, renewable energy systems, and general-purpose MOSFET switching where low loss and high current capability are critical.
High continuous drain current of 522 A supports demanding loads. Low on-resistance of 750 μΩ reduces conduction losses significantly. Robust industrial temperature range from -55°C to 175°C. High maximum power dissipation of 375 W ensures reliable performance.
Surface mount TO-263 6-pin package enables efficient PCB integration. Typical gate charge of 305 nC ensures efficient switching. Gate-source voltage rating of ±20 V allows safe device control. Compact package dimensions enable flexible system designs.
This Infineon HEXFET MOSFET is widely used in electronic components and semiconductor manufacturing sectors, particularly in building efficient power conversion, motor control, and power management devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 522 A, making it suitable for demanding loads in power electronics applications.
This MOSFET has a maximum drain-source voltage rating of 40 V, which is critical for high-power applications.
The on-resistance of this model is 750 micro-ohms, which helps to minimize conduction losses during operation.
It has a maximum power dissipation capability of 375 W, ensuring reliable performance in high-power scenarios.
The operating temperature range spans from -55°C to 175°C, making it suitable for harsh industrial environments.
This model is housed in a surface mount TO-263 package, which supports compact and reliable PCB mounting.
The typical gate charge at Vgs = 10 V is 305 nC, facilitating fast switching performance in applications.
The maximum gate-source voltage rating is ±20 V, ensuring safe drive conditions for the device.
The dimensions of this model are approximately 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
This device features an N-channel configuration, which is typical for enhancement mode MOSFETs.
It is commonly used in industrial power supplies, automotive electronics, renewable energy systems, and general-purpose switching applications.
The country of origin for this MOSFET is India.
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