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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.17mm |
| Length | 6.6mm |
| Model | STD5N80K5 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.73Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STD5N80K5 is a high-voltage N-Channel Power MOSFET optimized for switching and power management applications. It employs MDmesh K5 technology with a proprietary vertical structure that greatly reduces on-resistance and gate charge to improve efficiency and power density.
This MOSFET is housed in a 3-pin surface mount TO-252 package, measuring 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height, suitable for compact electronic circuits. Its enhancement mode channel and zener-protected gate allow safe and reliable operation.
The device supports a maximum continuous drain current of 4 A and a maximum drain-to-source voltage of 800 V, making it suitable for high-voltage switching tasks. Additionally, it features a maximum gate-source voltage of 30 V and a forward voltage of 1.5 V. The maximum power dissipation is rated at 60 W.
Operating temperature extremes from -55°C up to 150°C allow this MOSFET to perform reliably in harsh industrial, laboratory, and manufacturing settings. Its ultra-low gate charge of 5 nC ensures fast switching capabilities, which is beneficial in power converters, motor controls, and power supplies.
Common applications include switching power supplies, motor drivers, and general power switching circuits in industrial and electronics manufacturing environments. The device is RoHS compliant and designed without automotive standards.
Enhancement mode N-channel type ensuring efficient switching. Maximum continuous drain current of 4 amperes for reliable power handling. Maximum drain-to-source voltage of 800 volts supports high-voltage applications. Ultra-low gate charge of 5 nanocoulombs improves switching speed and efficiency.
Power dissipation capability up to 60 watts enhances thermal management. Compact TO-252 surface mount package for PCB space saving. Wide temperature tolerance from -55°C to 150°C suits harsh environments. Low on-resistance value of 1.73 ohms reduces conduction losses.
Explore more high-performance power semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart.
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