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STMicroelectronics N-Channel Power MOSFET, 4 A, 800 V, Enhancement Mode, TO-252 Package STD5N80K5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.17mm
Length 6.6mm
Model STD5N80K5
Width 6.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 1.73Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 60W
Typical Gate Charge Qg @ Vgs 5nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V

Key Features

  • Enhancement mode N-channel type ensuring efficient switching.
  • Maximum continuous drain current of 4 amperes for reliable power handling.
  • 800 volts maximum drain-to-source voltage supporting high-voltage applications.
  • Low gate charge of 5 nanocoulombs enabling faster switching speeds.
  • Maximum power dissipation of 60 watts for robust thermal handling.
  • Surface mount TO-252 package for easy PCB integration.
  • Wide operating temperature range from -55°C to 150°C for harsh environments.
  • Low on-resistance of 1.73 Ω improving conduction efficiency.

Product Description

STMicroelectronics STD5N80K5 is a high-voltage N-Channel Power MOSFET optimized for switching and power management applications. It employs MDmesh K5 technology with a proprietary vertical structure that greatly reduces on-resistance and gate charge to improve efficiency and power density.

This MOSFET is housed in a 3-pin surface mount TO-252 package, measuring 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height, suitable for compact electronic circuits. Its enhancement mode channel and zener-protected gate allow safe and reliable operation.

The device supports a maximum continuous drain current of 4 A and a maximum drain-to-source voltage of 800 V, making it suitable for high-voltage switching tasks. Additionally, it features a maximum gate-source voltage of 30 V and a forward voltage of 1.5 V. The maximum power dissipation is rated at 60 W.

Operating temperature extremes from -55°C up to 150°C allow this MOSFET to perform reliably in harsh industrial, laboratory, and manufacturing settings. Its ultra-low gate charge of 5 nC ensures fast switching capabilities, which is beneficial in power converters, motor controls, and power supplies.

Common applications include switching power supplies, motor drivers, and general power switching circuits in industrial and electronics manufacturing environments. The device is RoHS compliant and designed without automotive standards.

Enhancement mode N-channel type ensuring efficient switching. Maximum continuous drain current of 4 amperes for reliable power handling. Maximum drain-to-source voltage of 800 volts supports high-voltage applications. Ultra-low gate charge of 5 nanocoulombs improves switching speed and efficiency.

Power dissipation capability up to 60 watts enhances thermal management. Compact TO-252 surface mount package for PCB space saving. Wide temperature tolerance from -55°C to 150°C suits harsh environments. Low on-resistance value of 1.73 ohms reduces conduction losses.

Explore more high-performance power semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart.

STMicroelectronics N-Channel Power MOSFET, 4 A, 800 V, Enhancement Mode, TO-252 Package STD5N80K5
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Frequently Asked Questions

The maximum continuous drain current for this model is 4 amperes.

It supports a maximum drain-to-source voltage of 800 volts, making it suitable for high-voltage applications.

The gate charge is 5 nanocoulombs, which contributes to faster switching speeds.

The TO-252 package measures 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height.

The maximum power dissipation is rated at 60 watts, allowing for robust thermal handling.

It operates within a temperature range of -55°C to 150°C, suitable for harsh environments.

This model features an enhancement mode N-channel type, ensuring efficient switching.

The maximum gate-source voltage is 30 volts.

It is commonly used in switching power supplies, motor drivers, and general power switching circuits.

The on-resistance is 1.73 ohms, which improves conduction efficiency.

The TO-252 package has a pin count of 3.

Yes, the device is RoHS compliant, indicating it meets environmental standards for hazardous substances.

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