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Infineon HEXFET N-Channel Power MOSFET, 180 A, 100 V, Enhancement Mode, 3-Pin TO-220AB IRFB4110GPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | IRFB4110GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 370W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET features a TO-220AB 3-pin package suitable for through-hole mounting.
- It has a low maximum drain-source resistance of 4.5 mΩ to minimize conduction losses.
- Designed with an enhancement-mode N-channel for effective power control.
- It can dissipate up to 370 W of power with operating temperatures ranging from -55°C to 175°C.
- The typical gate charge is 150 nC at a gate-source voltage of 10 V, enabling fast switching.
- The device is rated with a maximum gate-source voltage of -20 V to +20 V.
- Forward voltage drop is low at 1.3 V to improve efficiency.
Product Description
Infineon IRFB4110GPBF HEXFET N-Channel Power MOSFET is a high-performance semiconductor device designed for efficient power switching. Featuring a maximum continuous drain current of 180 A and a drain-source voltage rating of 100 V, this device suits demanding applications in power electronics and industrial circuits.
Equipped with a TO-220AB package and through-hole mount, it offers mechanical robustness and excellent thermal management with a maximum power dissipation of 370 W. The low on-resistance of 4.5 mΩ reduces conduction losses, enhancing system efficiency.
Operating temperatures span from -55°C to 175°C, making it reliable in harsh industrial and automotive environments. The typical gate charge of 150 nC facilitates high-speed switching, while the maximum gate-source voltage range of -20 V to +20 V ensures operational safety and flexibility.
Its dimensions of 10.67 mm length, 4.83 mm width, and 16.51 mm height allow for compact assembly on PCBs. The device is not automotive standard qualified but delivers excellent performance for general power management needs.
This MOSFET features a 3-pin TO-220AB package suitable for through-hole mounting. Maximum continuous drain current of 180 A supports high power loads. Maximum drain-source voltage rating of 100 V assures device robustness.
Enhancement-mode N-channel improves switching efficiency. Low on-resistance of 4.5 mΩ reduces power loss. Maximum power dissipation of 370 W supports heavy-duty use. Operating temperature range from -55°C to 175°C for industrial applications.
Typical gate charge of 150 nC allows fast switching performance. Maximum gate-source voltage of -20 V to +20 V enables flexible operating conditions. Compact dimensions facilitate versatile PCB layout integration.
This product is ideal for industrial, power supply, and electronic design applications requiring reliable N-channel MOSFETs for power switching and amplification. Suitable for laboratory, manufacturing, and commercial electronic equipment development.
Explore more high-performance semiconductor devices and power MOSFETs in the Infineon series at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 180 A, making it suitable for high power loads.
This MOSFET has a maximum drain-source voltage rating of 100 V, ensuring robustness in various applications.
The dimensions of this model are 10.67 mm in length, 4.83 mm in width, and 16.51 mm in height.
The typical gate charge is 150 nC at a gate-source voltage of 10 V, which facilitates fast switching.
It can dissipate up to 370 W of power, supporting heavy-duty use in demanding applications.
The operating temperature range spans from -55°C to 175°C, making it suitable for harsh environments.
This model features a TO-220AB package, which is suitable for through-hole mounting.
The maximum gate-source voltage is rated at -20 V to +20 V, allowing for flexible operating conditions.
The on-resistance is low at 4.5 mΩ, which helps to reduce conduction losses and improve efficiency.
This model features an enhancement-mode N-channel, which enhances switching efficiency.
This device is not automotive standard qualified but is effective for general power management needs in industrial applications.
The forward voltage drop is low at 1.3 V, which contributes to improved efficiency in power applications.
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