STMicroelectronics N-Channel Trench Gate Field Stop IGBT 30 A 600 V 3-Pin TO-247 Through Hole STGW30H60DFB

STMicroelectronics STGW30H60DFB is an N-Channel Trench Gate Field Stop IGBT designed for high-efficiency power switching applications requiring fast switching and low power losses.

This three-terminal power semiconductor device integrates an insulated gate FET control input with a bipolar power transistor switch, combining benefits of both MOSFETs and bipolar transistors for superior performance.

It supports a maximum continuous collector current of 30 A and withstands up to 600 V collector-emitter voltage, suitable for demanding industrial, automotive, and power electronics applications.

Its robust TO-247 3-pin through-hole package enables reliable mounting and heat dissipation, while a maximum operating temperature of 175°C ensures durability in harsh environments.

The device operates efficiently with a collector-emitter saturation voltage of 2 V and gate-emitter voltage tolerance of ±20 V, contributing to reduced conduction losses and improved switching speed.

STGW30H60DFB complies with RoHS environmental standards, guaranteeing safe and sustainable manufacturing and usage. This IGBT is ideal for industrial power inverters, motor drives, UPS systems, and other high-power switching applications.

Features a maximum continuous collector current of 30 A. Rated for a maximum collector-emitter voltage of 600 V. Maximum power dissipation of 260 W. 3-pin TO-247 through-hole package type. Wide operating temperature range from -55°C to 175°C.

Maximum collector-emitter saturation voltage of 2 V. Gate-emitter voltage tolerance of ±20 V. Trench gate field stop technology for high performance. RoHS compliant. Compact dimensions: 15.75 mm (L) x 5.15 mm (W) x 20.15 mm (H).

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