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STMicroelectronics N-Channel IGBT 600 V 60 A 260 W TO-3P Through Hole STGWT30H60DFB
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STGWT30H60DFB |
| Mount Type | Through Hole |
| Series | HB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 60A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 260W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Maximum continuous collector current is 60 A.
- Maximum collector emitter voltage rating is 600 V.
- Power dissipation capability up to 260 W supports demanding power loads.
- Package type is robust TO-3P style with through hole mounting for durability.
- Device features a 3-pin configuration ensuring reliable connectivity.
- Gate emitter voltage maximum rating is ±20 V for stable control inputs.
- Collector emitter saturation voltage is a low 2 V for efficient conduction.
- Operating temperature range spans from -55°C up to a maximum of 175°C.
Product Description
STMicroelectronics STGWT30H60DFB is an advanced N-Channel Insulated Gate Bipolar Transistor (IGBT) suitable for a wide variety of industrial, electronic, and power control applications requiring efficient high-current switching capability.
This device can handle a maximum continuous collector current of 60 A and voltage rating of 600 V between collector and emitter. It has a maximum power dissipation of 260 W, making it capable of withstanding significant thermal loads under normal operation.
The transistor is housed in a secure TO-3P package with three pins, designed for through hole mounting, which provides solid mechanical stability in electronic assemblies. The gate emitter voltage rating of ±20 V ensures reliable gate drive without damage risk. The collector emitter saturation voltage is low at 2 V, improving conduction efficiency and reducing power losses.
It operates effectively over a wide temperature range from -55°C to 175°C, supporting demanding thermal environments common in industrial electronics. The product conforms to RoHS standards, ensuring compliance with environmental safety regulations.
Maximum continuous collector current 60 A for high current applications. 600 V collector emitter voltage rating for robust power handling. 260 W maximum power dissipation supports heavy-duty operation. TO-3P package with through hole mount ensures durability and easy installation.
3-pin configuration designed for stable electrical connections. ±20 V gate emitter voltage max for controlled switching. 2 V collector-emitter saturation voltage minimizes conduction losses. Wide operating temperature range from -55°C to 175°C allows use in harsh environments.
RoHS compliance ensures environmental safety and reduced hazardous substances. Part of the STMicroelectronics HBA series, guaranteeing quality and performance.
This IGBT is ideal for use in industrial motor drives, power inverters, switched-mode power supplies, and other high-efficiency power electronics requiring fast switching and high current capability.
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Frequently Asked Questions
The maximum continuous collector current for this model is 60 A, making it suitable for high current applications.
This IGBT has a maximum collector-emitter voltage rating of 600 V, allowing it to handle robust power loads.
It can dissipate up to 260 W, supporting demanding thermal loads during operation.
The device is housed in a TO-3P package with through hole mounting, ensuring mechanical stability in electronic assemblies.
The maximum gate emitter voltage rating is ±20 V, which ensures stable control inputs without risk of damage.
The collector-emitter saturation voltage is low at 2 V, which improves conduction efficiency and reduces power losses.
It operates effectively over a wide temperature range from -55°C to 175°C, suitable for harsh environments.
This model features a 3-pin configuration, designed for stable electrical connections.
Yes, it conforms to RoHS standards, ensuring compliance with environmental safety regulations.
It is part of the STMicroelectronics HB series, which guarantees quality and performance.
This model is ideal for industrial motor drives, power inverters, and switched-mode power supplies, requiring efficient high-current switching.
The country of origin for this IGBT is India.
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