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onsemi Power PNP Bipolar Transistor 3 A, 80 V, 40 W TO-220, Through Hole Mount TIP32BG
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.53mm |
| Model | TIP32BG |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | TIP32B |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -80V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 80V dc |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | -3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Supports a maximum DC collector current of 3 Amps suitable for power applications.
- Maximum collector-emitter voltage rating of 80 Volts ensures robust switching capability.
- Standard 3-pin TO-220 package supports through hole mounting for easy PCB integration.
- Power dissipation capability of up to 40 Watts for efficient thermal management.
- Minimum current gain (hFE) of 10 suitable for amplification needs.
- Operating temperature range spans from -65°C to 150°C enabling use in harsh environments.
- Maximum transition frequency of 1 MHz to support moderate frequency applications.
Product Description
onsemi TIP32BG Power PNP Bipolar Transistor is engineered for general purpose amplifier and switching usage with a maximum DC collector current of 3 A and collector-emitter voltage rating of 80 V. The device comes in a standard TO-220 3-pin package with through hole mount, facilitating reliable installation on PCBs.
This transistor includes high power dissipation capability up to 40 W, making it suitable for handling significant power loads during operation. Its minimum DC current gain (hFE) of 10 ensures adequate amplification for a wide range of electronic circuit applications.
The TIP32BG supports a wide operating temperature range from -65°C to 150°C, enabling robust performance in demanding industrial and commercial environments. Its maximum transition frequency of 1 MHz allows operation with moderate frequency signals.
With compact physical dimensions of 15.75 mm height, 10.53 mm length, and 4.83 mm width, this TO-220 package transistor fits easily into diverse circuit designs. The PNP transistor configuration offers complementary operation with onsemi TIP31 series NPN transistors.
Maximum DC collector current: 3 A for high current applications. Maximum collector-emitter voltage: 80 V enabling reliable switching. Power dissipation rating of 40 W supports intensive use. Through hole mount TO-220 package for easy PCB implementation.
Minimum current gain hFE of 10 ensures amplification efficiency. Wide temperature range accommodates industrial environments. 3-pin single transistor configuration simplifies circuitry.
This component is ideal for use in industrial, electronic manufacturing, automotive, and laboratory electronic control systems requiring robust power transistor solutions. As a high-quality bipolar power transistor from onsemi, the TIP32BG series ensures reliable switching and amplification performance.
Browse the Bipolar Transistors category at EnvMart for more semiconductor components and power transistors to complete your electronic design needs.
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Frequently Asked Questions
The maximum DC collector current for the TIP32BG is 3 Amps, making it suitable for high current applications.
The TIP32BG has a maximum collector-emitter voltage rating of 80 Volts, ensuring reliable switching capability.
This transistor can handle power dissipation of up to 40 Watts, which supports intensive use in various applications.
The operating temperature range for this transistor spans from -65°C to 150°C, allowing use in harsh environments.
The dimensions of the TIP32BG are 15.75 mm in height, 10.53 mm in length, and 4.83 mm in width.
This model supports through hole mounting, which facilitates reliable installation on PCBs.
The minimum DC current gain (hFE) for this transistor is 10, ensuring adequate amplification for various electronic circuits.
The maximum transition frequency of the TIP32BG is 1 MHz, allowing operation with moderate frequency signals.
The TIP32BG comes in a standard TO-220 package type, which is commonly used for power transistors.
The configuration of this transistor is single, which simplifies circuitry in various applications.
The maximum emitter-base voltage (VEBO) for this model is 5V DC.
This transistor is suitable for use in industrial, electronic manufacturing, automotive, and laboratory electronic control systems.
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