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onsemi Digital Transistor 60 V dc NPN Through Hole SOT-93, 3-Pin TIP35AG
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 41.91mm |
| Length | 16.26mm |
| Model | TIP35AG |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | TIP35A |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-93 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V dc |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 60V dc |
| Maximum Power Dissipation Pd | 125W |
| Transistor Configuration | Single |
Key Features
- Maximum collector emitter voltage of 60 V dc ensures high voltage handling.
- Low leakage current with ICEO = 1.0 mA at 30 and 60 V.
- Excellent DC current gain (hFE) minimum value of 15.
- Maximum power dissipation of 125 W for robust performance.
- Configured as a 3-pin NPN transistor in SOT-93 package with through hole mount.
- Operating temperature up to 150°C suitable for demanding industrial environments.
- Complementary to TIP36 series, suitable for various amplifier designs.
- Manufactured in China and supplied as a new condition component.
Product Description
onsemi TIP35AG is a digital bipolar power transistor designed primarily for general-purpose power amplifier and switching applications. It supports a collector current of 25 A and features a low leakage current of 1.0 mA at voltages of 30 and 60 V, ensuring reliability in power electronic circuits.
This NPN transistor is housed in a SOT-93 package with a through hole mounting style, making it compatible with various PCB and electronic assembly processes.
The component offers a maximum collector-emitter voltage (Vceo) of 60 V dc and maximum power dissipation of 125 W, allowing it to handle high power loads efficiently. Its minimum DC current gain (hFE) of 15 and a typical gain of 40 at 15 A support strong amplification qualities. The transistor is suitable for operation in temperatures up to 150°C, making it adaptable to demanding conditions found in industrial, automotive, and power management applications.
Physical dimensions include a length of 16.26 mm, height of 41.91 mm, and width of 5.3 mm, facilitating easy integration in power semiconductor assemblies. Maximum collector emitter voltage 60 V dc. Maximum power dissipation 125 W.
Low leakage current ICEO = 1.0 mA at 30 and 60 V. Minimum DC current gain hFE 15. Operating temperature up to 150°C. Through hole mounting in SOT-93 package. 3-pin transistor configuration with NPN polarity. Complementary to TIP36 series PNP transistors.
New condition, manufactured in China.
This transistor is well-suited for industrial power amplifier circuits, power switching applications, automotive electronics, and other high-current, high-voltage environments requiring reliable bipolar junction transistors. Explore more transistor and semiconductor components in the Bipolar Transistors category at EnvMart.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) of the TIP35AG is 60 V dc.
This model has a maximum power dissipation of 125 W, allowing it to handle high power loads efficiently.
The minimum DC current gain (hFE) for this transistor is 15, with a typical gain of 40 at 15 A.
The physical dimensions of the TIP35AG are 16.26 mm in length, 5.3 mm in width, and 41.91 mm in height.
This model utilizes a through hole mounting style, making it compatible with various PCB and electronic assembly processes.
The TIP35AG can operate in temperatures up to 150°C, making it suitable for demanding industrial environments.
The TIP35AG is configured as a 3-pin NPN transistor.
The maximum collector base voltage (VCBO) for this transistor is 60 V dc.
The maximum emitter base voltage (VEBO) for this model is 5 V dc.
This transistor is well-suited for general-purpose power amplifier circuits, power switching applications, and automotive electronics.
The TIP35AG is manufactured in China and supplied as a new condition component.
Yes, the TIP35AG is complementary to the TIP36 series PNP transistors, making it suitable for various amplifier designs.
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