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onsemi N-Channel Power MOSFET 60 V, 89 A, 66 W Maximum Power Dissipation, 8-Pin SO-8FL Package NTMFS5C646NLT1G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.05mm
Length 6.1mm
Model NTMFS5C646NLT1G
Width 5.1mm
Mount Type Surface
Series NTMFS5C646NL
Maximum Operating Temperature 150°C
Package Type SO-8FL
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 89A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 6.3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 66W
Typical Gate Charge Qg @ Vgs 33.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Supports maximum continuous drain current of 89 amperes.
  • Operates at a maximum drain-source voltage of 60 volts.
  • Features an SO-8FL 8-pin surface-mount package for easy PCB integration.
  • Provides a low maximum drain-source resistance of 6.3 milliohms.
  • Enhancement mode channel ensures reliable switching performance.
  • Typical gate charge is 33.7 nanocoulombs at specified gate voltage.
  • Functions safely within a temperature range from -55°C up to 150°C.
  • Maximum power dissipation capability is rated at 66 watts.

Product Description

The onsemi NTMFS5C646NLT1G is a high-performance N-Channel Power MOSFET designed to deliver efficient power switching in electronic circuits. It supports a maximum continuous drain current of 89 A and can withstand a maximum drain-source voltage of 60 V, making it suitable for demanding power management and driver applications.

This device features an 8-pin SO-8FL surface-mount package that facilitates compact PCB layouts and reliable mounting. Its low maximum drain-source resistance (Rds) of 6.3 mΩ ensures minimal conduction losses and improved efficiency.

Featuring an enhancement mode channel, the MOSFET achieves effective switching with a typical gate charge of 33.7 nC at Vgs, optimizing gate drive requirements. It operates safely over a wide temperature range from -55°C to 150°C, ensuring robust performance under various environmental conditions.

With a maximum power dissipation rating of 66 watts, this MOSFET is capable of handling substantial power loads in industrial, automotive, and consumer electronics applications. The device's compact physical dimensions (6.1 mm length, 5.1 mm width, 1.05 mm height) support integration into space-sensitive designs.

This onsemi MOSFET is ideal for use in power supply regulation, motor control, battery management, and high-efficiency switching converters. Its reliable electrical characteristics and proven build quality provide a dependable solution for electrical and electronic engineers.

Supports maximum continuous drain current of 89 amperes. Operates at a maximum drain-source voltage of 60 volts. Features an SO-8FL 8-pin surface-mount package for easy PCB integration. Low Rds(on) ensures efficient conduction and reduced power loss.

Wide operating temperature range from -55°C to 150°C. High power dissipation capacity up to 66 watts. Typical gate charge of 33.7 nC for optimized gate driving. Compact and standard package dimensions. Suitable for automotive, industrial, manufacturing, and electronics applications.

Explore onsemi products and related power management components in the Electronics & Electricals category at EnvMart for comprehensive solutions.

onsemi N-Channel Power MOSFET 60 V, 89 A, 66 W Maximum Power Dissipation, 8-Pin SO-8FL Package NTMFS5C646NLT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 89 amperes.

It operates at a maximum drain-source voltage of 60 volts.

This model features an SO-8FL 8-pin surface-mount package.

The maximum power dissipation capability is rated at 66 watts.

The typical gate charge is 33.7 nanocoulombs at the specified gate voltage.

The dimensions are 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height.

It has a low maximum drain-source resistance of 6.3 milliohms.

This MOSFET operates safely within a temperature range from -55°C to 150°C.

It features an enhancement mode channel for effective switching performance.

The maximum gate-source voltage is -20 to +20 volts.

It is suitable for power supply regulation, motor control, battery management, and high-efficiency switching converters.

The country of origin is India.

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