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Infineon HEXFET N-Channel MOSFET 33 A 100 V Enhancement 3-Pin TO-263 IRF540NSTRRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.83mm
Length 10.67mm
Model IRF540NSTRRPBF
Width 9.65mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 33A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 44mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 130W
Typical Gate Charge Qg @ Vgs 71nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Delivers a maximum continuous drain current of 33 amperes for demanding power circuits.
  • Supports a maximum drain-source voltage of 100 volts with high reliability.
  • Designed with low RDS(on) of 44 milliohms to minimize power losses and heat generation.
  • Features an enhancement mode channel providing efficient switching performance.
  • Capable of dissipating up to 130 watts for high-power applications.
  • Operates reliably in a temperature range from -55°C to 175°C for stable performance.
  • Typical gate charge at Vgs is 71 nanocoulombs, enabling fast switching.
  • Equipped with a D2PAK (TO-263) surface mount package for easy PCB integration and heat dissipation.

Product Description

Infineon IRF540NSTRRPBF HEXFET N-Channel MOSFET is engineered for high current and power applications requiring excellent efficiency and thermal management. This device supports a continuous drain current of 33A and withstands drain-source voltages of up to 100V, making it ideal for power management and control circuits in industrial automation, motor drives, and power supply modules.

The TO-263 D2PAK package facilitates surface mounting on printed circuit boards and promotes effective thermal dissipation. With a low RDS(on) value of 44mΩ, the MOSFET reduces conduction losses, minimizing heat buildup and improving energy efficiency in electronic systems.

This MOSFET operates reliably from extreme cold conditions of -55°C up to a maximum of 175°C, ensuring rugged performance in harsh environments. Its enhancement mode channel and typical gate charge of 71nC allow for fast switching speeds, critical for efficient DC-DC converters and other high-frequency power applications.

Its robust gate-source voltage range of -20 to +20 volts delivers design flexibility to accommodate various voltage control schemes. Although not certified to automotive standards, its thermal and electrical characteristics make it suitable for demanding industrial and commercial electronics.

Maximum continuous drain current of 33A supports high current power circuits. Low on-resistance of 44 milliohms decreases power dissipation and thermal stress. Wide operating temperature from -55°C to 175°C enables reliability in extreme environments.

D2PAK (TO-263) surface mount package ensures efficient heat removal and PCB integration. Typical gate charge of 71nC contributes to rapid switching and improved efficiency. Maximum power dissipation rating of 130W suits high power electronic designs.

This Infineon HEXFET MOSFET is widely utilized in industrial electronic systems, power supplies, motor drives, and DC-DC converters where efficient power switching is critical. Its surface mount format and thermal capabilities facilitate integration into compact, high-performance electronic assemblies.

Browse EnvMart’s selection of MOSFETs and discrete semiconductors for quality and reliable power management components suitable for diverse industrial and commercial applications.

Infineon HEXFET N-Channel MOSFET 33 A 100 V Enhancement 3-Pin TO-263 IRF540NSTRRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 33 amperes, making it suitable for demanding power circuits.

It can withstand a maximum drain-source voltage of 100 volts, which is essential for various power management applications.

This model features a low RDS(on) value of 44 milliohms, which helps minimize power losses and heat generation during operation.

It operates reliably within a temperature range of -55°C to 175°C, ensuring stable performance in extreme conditions.

The typical gate charge at Vgs is 71 nanocoulombs, enabling fast switching capabilities.

It is packaged in a D2PAK (TO-263) surface mount format, which facilitates easy PCB integration and effective heat dissipation.

The maximum power dissipation rating for this MOSFET is 130 watts, suitable for high-power applications.

This model has a pin count of 3, which is standard for its package type.

It features an enhancement mode N-channel, which is designed for efficient switching performance.

The maximum gate-source voltage is -20 to +20 volts, providing flexibility for various voltage control schemes.

The country of origin for this MOSFET is India.

It is widely utilized in industrial electronic systems, power supplies, motor drives, and DC-DC converters, where efficient power switching is critical.

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