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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF540NSTRRPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 44mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon IRF540NSTRRPBF HEXFET N-Channel MOSFET is engineered for high current and power applications requiring excellent efficiency and thermal management. This device supports a continuous drain current of 33A and withstands drain-source voltages of up to 100V, making it ideal for power management and control circuits in industrial automation, motor drives, and power supply modules.
The TO-263 D2PAK package facilitates surface mounting on printed circuit boards and promotes effective thermal dissipation. With a low RDS(on) value of 44mΩ, the MOSFET reduces conduction losses, minimizing heat buildup and improving energy efficiency in electronic systems.
This MOSFET operates reliably from extreme cold conditions of -55°C up to a maximum of 175°C, ensuring rugged performance in harsh environments. Its enhancement mode channel and typical gate charge of 71nC allow for fast switching speeds, critical for efficient DC-DC converters and other high-frequency power applications.
Its robust gate-source voltage range of -20 to +20 volts delivers design flexibility to accommodate various voltage control schemes. Although not certified to automotive standards, its thermal and electrical characteristics make it suitable for demanding industrial and commercial electronics.
Maximum continuous drain current of 33A supports high current power circuits. Low on-resistance of 44 milliohms decreases power dissipation and thermal stress. Wide operating temperature from -55°C to 175°C enables reliability in extreme environments.
D2PAK (TO-263) surface mount package ensures efficient heat removal and PCB integration. Typical gate charge of 71nC contributes to rapid switching and improved efficiency. Maximum power dissipation rating of 130W suits high power electronic designs.
This Infineon HEXFET MOSFET is widely utilized in industrial electronic systems, power supplies, motor drives, and DC-DC converters where efficient power switching is critical. Its surface mount format and thermal capabilities facilitate integration into compact, high-performance electronic assemblies.
Browse EnvMart’s selection of MOSFETs and discrete semiconductors for quality and reliable power management components suitable for diverse industrial and commercial applications.
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