Infineon HEXFET N-Channel MOSFET 6.5 A 20 V Enhancement Surface Mount Micro6 6-Pin IRLMS2002TRPBF

Infineon's IRLMS2002TRPBF HEXFET N-Channel MOSFET is engineered for robust performance in power management applications requiring efficient switching and thermal stability. The device features a continuous drain current rating of 6.5 A and a maximum drain-source voltage of 20 V, packaged in a compact 6-pin Micro6 surface mount form factor that optimizes PCB space.

Designed with enhancement-mode operation, it supports gate-to-source voltages up to ±12 V, enabling flexible and precise control in electronic circuits. Its low typical drain-source resistance of 45 mΩ minimizes conduction losses, thereby improving overall circuit efficiency. The device dissipates up to 2 W of power with a maximum junction temperature of 150°C, making it suitable for demanding industrial and automotive environments.

Its compact dimensions of 3 mm length, 1.75 mm width, and 1.3 mm height allow integration into dense circuit layouts. The MOSFET features a typical gate charge of 15 nC at Vgs, enhancing its switching speed and efficiency for high-frequency applications.

This MOSFET is ideal for battery management and load control systems, high-efficiency power supplies, and renewable energy systems requiring reliable power handling and thermal management. The maximum junction-to-ambient thermal resistance is 62.5°C/W, ensuring effective heat dissipation during operation. A linear thermal derating factor of 0.016 W/°C needs consideration to maintain device reliability at elevated temperatures.

Low on-resistance enhances power efficiency. Continuous drain current capability of up to 6.5 A. Supports ±12 V gate-to-source voltage for flexible control. Efficient power dissipation rated at 2 W. Compact 6-pin Micro6 surface mount package.

Operating temperature range from -55°C to 150°C. Typical gate charge of 15 nC at Vgs for fast switching. Maximum drain-source resistance of 45 mΩ. Designed for automotive and industrial power management. Manufactured in Thailand with HEXFET technology.

This MOSFET series from Infineon is well-suited for industrial, automotive, electrical, and renewable energy applications that demand reliable and efficient power semiconductor devices. Explore more MOSFETs and power components in the Electronics & Electricals category at EnvMart.