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Infineon HEXFET N-Channel MOSFET, 55 A, 100 V Enhancement Mode, 3-Pin TO-263 IRL2910STRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRL2910STRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
Key Features
- This N-channel device features a surface mount construction with 3 pins for easy integration.
- It operates with an enhancement mode channel and low on-resistance Rds of 40 milliohms.
- The MOSFET supports a maximum power dissipation of 200 W and wide operating temperature range from -55°C to 175°C.
- Typical gate charge is 140 nC at Vgs, aiding efficient switching performance.
- Constructed with HEXFET technology for reduced conduction losses and improved system efficiency.
- Designed for applications requiring robust power management and thermal performance.
- Features maximum gate-source voltage of ±16 V and forward voltage drop of 1.3 V.
- Physical dimensions are 10.67 mm length, 9.65 mm width, and 4.83 mm height.
Product Description
Infineon IRL2910STRLPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed for power electronics applications demanding efficient switching and thermal stability.
This device is built with HEXFET technology ensuring low conduction losses, which leads to enhanced system efficiency in industrial, consumer electronics, automotive, and power management circuits.
Featuring a 3-pin TO-263 surface mount package, it supports a maximum continuous drain current of 55 A with a drain-source voltage (Vds) rating of 100 V. The MOSFET operates in enhancement mode with a low on-resistance of 40 milliohms, enabling high current throughput with minimal power losses.
Operating temperature range spans from -55°C minimum to a maximum of 175°C, making it suitable for demanding environmental conditions. It dissipates up to 200 W of power, which facilitates use in applications involving high power loads.
The device's gate charge of 140 nC at Vgs contributes to quick switching, thereby optimizing efficiency in PWM and amplification circuits. The maximum gate-source voltage rating of ±16 V ensures robust gate protection.
This MOSFET finds application in industrial power supplies, motor controls, DC-DC converters, automotive electronics, and HVAC systems where reliable power switching is critical. Its compact TO-263 package eases mounting on PCBs with limited space.
This Infineon HEXFET MOSFET features N-channel type and enhancement mode operation. Maximum continuous drain current rating of 55 Amperes. Drain-source voltage rating of 100 Volts in a 3-pin TO-263 package. On-resistance (Rds) of 40 milliohms minimizing conduction losses.
Maximum power dissipation capacity of 200 Watts. Wide operating temperature range from -55°C to 175°C for durability. Typical gate charge 140 nC at Vgs supporting efficient switching. Maximum gate-source voltage of ±16 Volts.
Physical size dimensions: 10.67 mm length, 9.65 mm width, and 4.83 mm height. Explore the wide selection of Infineon power MOSFETs on EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
This MOSFET has a drain-source voltage rating of 100 V.
The on-resistance (Rds) of this N-channel MOSFET is 40 milliohms.
It supports a maximum power dissipation of 200 W.
The operating temperature range spans from -55°C to 175°C.
The typical gate charge at Vgs is 140 nC.
The physical dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The maximum gate-source voltage is ±16 V.
This MOSFET uses a TO-263 package type.
It features a surface mount construction with 3 pins for easy integration.
This model is suitable for applications in industrial power supplies, motor controls, DC-DC converters, automotive electronics, and HVAC systems.
It is constructed with HEXFET technology, which ensures low conduction losses and improved system efficiency.
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