STMicroelectronics N-Channel IGBT 30 A 600 V 3-Pin TO-220 Through Hole STGF15H60DF

STMicroelectronics STGF15H60DF is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a collector current rating of 30 A and a collector emitter voltage of 600 V, housed in a robust 3-pin TO-220 through-hole package. This device offers a combination of MOSFET-like gate drive characteristics with the high current and low saturation voltage capabilities of bipolar transistors, making it ideal for efficient power switching applications.

The STGF15H60DF supports a maximum power dissipation of 30 W and enables switching speeds up to 1 MHz, facilitating rapid control and high efficiency in industrial, automotive, and electronic power conversion systems. Its broad operating temperature range from -55°C to 175°C ensures reliable performance in demanding environments.

Featuring trench gate field stop technology, this IGBT enhances switching behavior and reduces losses, contributing to improved thermal management and device longevity. Its compact physical dimensions - height 16.4 mm, length 10.4 mm, and width 4.6 mm - simplify PCB layout and integration in constrained spaces.

The device is designed for through-hole mounting within power electronics assemblies, inverter circuits, motor drives, and other applications requiring high current switching and robustness. The 3-pin configuration supports straightforward electrical connections and system assembly.

Supports continuous collector current of 30 A ensuring robust current handling capability. Rated for maximum collector emitter voltage of 600 V for high voltage applications. Encapsulated in a 3-pin TO-220 package suitable for through-hole mounting.

Maximum power dissipation of 30 W allows for moderate thermal loads during operation. High switching speed of up to 1 MHz for rapid response in power circuits. Wide operating temperature range from -55°C to 175°C suitable for harsh environments.

Maximum collector emitter saturation voltage of 2 V reduces power loss in conduction state. Constructed with trench gate field stop technology for enhanced performance. Device dimensions are compact with height 16.4mm, length 10.4mm, and width 4.6mm for easy integration.

This STMicroelectronics N-Channel IGBT is ideal for use in industrial automation, motor control, power supplies, inverters, and other electronic systems requiring reliable, high-performance switching devices. EnvMart offers this product for engineers and designers aiming to optimize power electronics efficiency and reliability.