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Infineon OptiMOS P Type P-Channel MOSFET 14.9 A 20 V Enhancement Mode 8-Pin DSO BSO201SPHXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.65mm |
| Length | 5mm |
| Model | BSO201SPHXUMA1 |
| Width | 4mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | DSO |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 14.9A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 12.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
| OptiMOS™ P-Channel Series | Temperature range from -55°C to +175°C |
Key Features
- Maximum continuous drain current of 14.9 A ensures efficient high current handling.
- Maximum drain-source voltage of 20 V for low voltage applications.
- Low maximum drain-source resistance of 12.9 milliohms reduces conduction losses.
- Enhancement mode channel for improved switching performance.
- Surface mount 8-pin DSO package supports compact PCB layout.
- Operating temperature range from -55°C to 150°C supports diverse applications.
- Maximum power dissipation of 2.5 W for reliable thermal performance.
- Typical gate charge of 66 nC enables faster switching speeds.
Product Description
Infineon BSO201SPHXUMA1 is a high-quality OptiMOS P-Type P-Channel power MOSFET designed for efficient power switching in diverse electronics applications. It features a maximum continuous drain current of 14.9 A and a maximum drain-source voltage of 20 V with enhancement mode channel to optimize switching losses and power efficiency.
Encapsulated in a compact 8-pin DSO surface mount package, this MOSFET supports high-density circuit board layouts. Its ultra-low max drain-source resistance of 12.9 mΩ minimizes conduction losses while a typical gate charge of 66 nC allows fast switching performance, enhancing overall device efficiency. Operating reliably across a temperature range from -55°C to 150°C, it is suitable for demanding industrial, automotive, motor control, dc-dc converters, and eMobility power management use cases.
The device is avalanche rated and Pb-free with RoHS compliance, meeting sustainability and quality standards. It is not automotive AEC qualified but is designed for automotive-grade applications. The maximum power dissipation rating is 2.5 W, ensuring robust operation in thermal challenging environments.
Applications include power management circuits in automotive electronics, industrial motor drives, and portable power supplies. This MOSFET delivers a reliable, low-loss switching solution enabling enhanced efficiency and thermal management in electronic designs.
Maximum continuous drain current of 14.9 A supports high load current. 20 V drain-source voltage rating for low voltage applications. Low on-resistance 12.9 milliohms improves conduction efficiency. Enhancement channel mode reduces switching losses.
Compact 8-pin DSO surface mount package for space-saving PCB designs. Wide operating temperature from -55ºC to 150ºC for versatile environments. Maximum power dissipation of 2.5 W ensures thermal robustness. Typical gate charge of 66 nC enables fast switching.
Avalanche rated, RoHS-compliant, and Pb-free material usage. Application suitability for automotive, industrial, and eMobility uses. Explore more MOSFETs and semiconductor products in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 14.9 A, allowing for efficient high current handling in various applications.
This unit has a maximum drain-source voltage rating of 20 V, suitable for low voltage applications.
It features a low maximum drain-source resistance of 12.9 milliohms, which reduces conduction losses during operation.
The typical gate charge is 66 nC, enabling faster switching speeds and improved efficiency.
It operates reliably across a temperature range from -55°C to 150°C, making it suitable for diverse environments.
This model is encapsulated in a compact 8-pin DSO surface mount package, supporting high-density circuit board layouts.
The maximum power dissipation for this MOSFET is 2.5 W, ensuring reliable thermal performance in challenging environments.
It utilizes an enhancement mode channel, which optimizes switching performance and reduces losses.
The dimensions of this model are 1.65 mm in height, 5 mm in length, and 4 mm in width.
It is suitable for applications in power management circuits, automotive electronics, industrial motor drives, and portable power supplies.
Yes, this model is RoHS compliant and made with Pb-free materials, meeting sustainability standards.
The maximum gate-source voltage for this unit is -12 V to +12 V, allowing for flexible circuit design.
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