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Infineon OptiMOS P Type P-Channel MOSFET, 14.9 A, 20 V Enhancement Mode, 8-Pin DSO BSO201SPHXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.65mm |
| Length | 5mm |
| Model | BSO201SPHXUMA1 |
| Width | 4mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | DSO |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 14.9A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 12.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
| OptiMOS™ P-Channel Series | Temperature range from -55°C to +175°C |
Key Features
- Designed for enhanced switching efficiency and low on-state resistance.
- Supports enhancement mode operation for effective control.
- Maximum power dissipation of 2.5 W ensures reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C for robust applications.
- Typical gate charge of 66 nC results in efficient switching behavior.
- Compact package dimensions with 5 mm length, 4 mm width, and 1.65 mm height.
- Offers avalanche rating and high maximum gate-source voltage tolerance up to ±12 V.
- Pb-free and RoHS compliant with lead plating compatible with automotive standards.
Product Description
Infineon BSO201SPHXUMA1 is a P-Type P-Channel power MOSFET from the OptiMOS™ series, designed for high-performance power management applications. It operates at 14.9 A maximum continuous drain current and 20 V maximum drain-source voltage, packaged in an 8-Pin DSO form factor suitable for surface mounting.
This MOSFET supports enhancement mode channel operation with ultra-low switching and conduction losses, making it efficient for energy savings in industrial and automotive electronics. It features a maximum power dissipation of 2.5 W, ensuring effective thermal management during continuous operation within the −55°C to 150°C temperature range.
The device offers a typical gate charge of 66 nC at Vgs and a wide maximum gate-source voltage range of -12 V to +12 V, allowing for reliable gate drive and protection. Its on-resistance is low at 12.9 milliohms, optimizing conduction performance.
Packaged dimensions are compact, with a length of 5 mm, width of 4 mm, and height of 1.65 mm, facilitating integration into compact electronic assemblies. The device is Pb-free with RoHS compliance and meets automotive quality criteria, featuring avalanche rating for robust switching under transient conditions.
Applications include DC-DC converters, motor control circuits, automotive electronics, and eMobility systems where efficiency and reliability are critical. Infineon's comprehensive portfolio of MOSFET devices lends to versatile design architectures in power electronics.
Designed for enhanced switching efficiency and low on-state resistance. Supports enhancement mode operation for effective control. Maximum power dissipation of 2.5 W ensures reliable thermal performance. Wide operating temperature range from -55°C to 150°C for robust applications.
Typical gate charge of 66 nC results in efficient switching behavior. Compact package dimensions with 5 mm length, 4 mm width, and 1.65 mm height. Offers avalanche rating and high maximum gate-source voltage tolerance up to ±12 V.
Pb-free and RoHS compliant with lead plating compatible with automotive standards. Ideal for DC-DC converters, motor control, automotive, and eMobility applications. Explore more products in the MOSFET category at EnvMart for industrial, laboratory, automotive, and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14.9 A.
It has a maximum drain-source voltage rating of 20 V.
The typical gate charge is 66 nC at Vgs.
The dimensions are 5 mm in length, 4 mm in width, and 1.65 mm in height.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation is rated at 2.5 W.
This MOSFET supports surface mounting.
The on-resistance is 12.9 milliohms, optimizing conduction performance.
It has a maximum gate-source voltage tolerance of ±12 V.
It is suitable for applications including DC-DC converters, motor control circuits, automotive electronics, and eMobility systems.
Yes, it is Pb-free and RoHS compliant, meeting automotive quality criteria.
This model belongs to the OptiMOS P-Series.
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