Infineon HEXFET N-Channel MOSFET 33 A 150 V Enhancement Mode 3-Pin TO-263 IRFS4615TRLPBF

Infineon IRFS4615TRLPBF HEXFET N-Channel MOSFET is a high-voltage enhancement mode transistor delivering 33 A continuous drain current with a maximum drain-source voltage rating of 150 V. This transistor comes in a 3-pin TO-263 package optimized for surface mount assembly, ensuring effective thermal management in power electronics applications.

The MOSFET features a low on-resistance of 42 mΩ which minimizes conduction losses under heavy load conditions. With a typical gate charge of 26 nC, it enables precise and predictable gate drive requirements, facilitating efficient switching performance. The device supports maximum power dissipation of 144 W, suitable for elevated power levels in industrial and commercial environments.

It operates over a broad temperature range from -55°C to 175°C, making it ideal for applications requiring high-temperature reliability such as motor drives, synchronous rectifiers, and industrial DC-DC power supplies. The maximum allowable gate-to-source voltage is ±20 V providing robust protection against gate stress.

Applications include industrial power supplies, battery management systems with high-voltage switching needs, synchronous rectification in power conversion, and motor-drive stages demanding high current capability. The surface mount TO-263 package offers enhanced heat dissipation by mounting on copper-area land patterns.

33 A maximum continuous drain current capacity. 150 V maximum drain-source voltage for high-voltage switching. Low RDS(on) of 42 milliohms reduces power losses. Typical gate charge of 26 nC allows efficient gate drive control.

Maximum power dissipation of 144 W supports high power applications. Wide operating temperature range from -55°C to 175°C. 3-pin TO-263 surface mount package for easy PCB integration. Maximum gate-source voltage of ±20 V prevents damage from gate stress.

Suitable for use in DC-DC converters, motor drives, and battery management. Reliable performance in demanding thermal and high-temperature environments.

This MOSFET is an excellent component choice for industrial, laboratory, and commercial power electronics requiring reliable high current and high voltage switching capabilities. Explore more Infineon semiconductor solutions and HEXFET MOSFETs in the EnvMart catalog for enhanced power management system design.