$0.66
$0.64
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET Type P-Channel MOSFET 11 A 55 V Enhancement Mode 3-Pin TO-252 IRFR9024NTRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR9024NTRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 175mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- Maximum continuous drain current of 11 A for high-performance applications.
- Drain-source voltage rating of 55 V ensures reliable operation.
- Low on-resistance RDS(on) of 175 mΩ reduces power loss during conduction.
- Enhancement mode design optimizes control and switching efficiency.
- TO-252 DPAK package allows easy surface mounting on PCBs.
- Wide operating temperature range from -55 °C to 150 °C for diverse environments.
- Maximum power dissipation capability of 38 W to manage thermal loads.
- Supports gate voltages from -20 V to +20 V for design flexibility.
Product Description
Infineon IRFR9024NTRPBF HEXFET Type P-Channel MOSFET features a maximum continuous drain current of 11 A and a drain-source voltage rating of 55 V in a compact TO-252 (DPAK) surface mount package. Designed with enhancement mode technology, this MOSFET provides reliable, low-loss switching performance suitable for a variety of electronic and industrial applications.
The device has a low on-resistance RDS(on) of 175 mΩ which minimizes conduction losses and improves overall circuit efficiency. It supports gate voltages ranging from -20 V to +20 V, offering flexible control options in power management and switching circuits.
With a maximum power dissipation of 38 W and a wide operating temperature range spanning from -55 °C to 150 °C, it ensures dependable operation under demanding thermal and environmental conditions. The typical gate charge of 19 nC allows rapid switching, making it well-suited for motor controls, DC-DC converters, load switching, and other industrial automation tasks.
The standard TO-252 surface mount package facilitates easy PCB integration, reducing assembly time and improving reliability. This product is ideal for use in automation, electronics manufacturing, electrical and mechanical engineering sectors requiring efficient energy management and robust performance.
Maximum continuous drain current of 11 A for high-performance applications. Drain-source voltage up to 55 V for durable component operation. Low RDS(on) of 175 mΩ minimizes power loss during conduction. Enhancement mode design improves switching efficiency.
TO-252 surface mount package enables simple PCB assembly. Wide temperature operating range from -55 °C to 150 °C. Maximum power dissipation of 38 W ensures thermal reliability. Gate voltage tolerance from -20 V to +20 V for flexible designs.
Typical gate charge of 19 nC supports fast switching. Applications include motor control, power supplies, and industrial automation. Explore more semiconductor solutions and MOSFET products at EnvMart for your industrial and electronic component needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 11 A, making it suitable for high-performance applications.
This MOSFET has a drain-source voltage rating of 55 V, ensuring reliable operation in various applications.
It features a low on-resistance RDS(on) of 175 mΩ, which helps reduce power loss during conduction.
The typical gate charge is 19 nC, allowing for rapid switching capabilities.
This device operates within a wide temperature range from -55 °C to 150 °C, suitable for diverse environments.
The maximum power dissipation capability of this MOSFET is 38 W, which helps manage thermal loads effectively.
It is packaged in a TO-252 (DPAK) surface mount package, facilitating easy integration onto PCBs.
This MOSFET supports gate voltages ranging from -20 V to +20 V, providing design flexibility.
This model has a pin count of 3, which is typical for its type.
It is a Type P channel MOSFET, designed for enhancement mode operation.
The country of origin for this MOSFET is India.
This model is suitable for applications such as motor control, power supplies, and industrial automation.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
$0.66
$0.64
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent