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Infineon HEXFET Type P-Channel MOSFET 13 A 100 V Enhancement 3-Pin TO-252 IRFR5410TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Height 2.39mm
Length 6.73mm
Model IRFR5410TRPBF
Width 6.22mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 13A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 205mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 66W
Typical Gate Charge Qg @ Vgs 58nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.6V

Key Features

  • This P-Channel MOSFET features an enhancement mode channel and is designed for surface mounting.
  • It supports a maximum power dissipation of 66 W, suitable for demanding applications.
  • The device operates within a broad temperature range from -55°C to 150°C.
  • Typical gate charge is 58 nC at rated gate-source voltage, optimizing switching performance.
  • It has a maximum drain-source resistance (Rds) of 205 mΩ, minimizing conduction losses.
  • The MOSFET is designed without specific automotive certifications but benefits from Infineon's HEXFET technology for efficiency.
  • Maximum gate-source voltage range is from -20 V to +20 V, accommodating a wide control voltage.

Product Description

Infineon IRFR5410TRPBF is a HEXFET Type P-Channel MOSFET engineered for efficient power management in electronic and industrial applications. It delivers a maximum continuous drain current of 13 A and can withstand maximum drain-source voltage of 100 V. Presented in a compact surface mount TO-252 package with 3 pins, this device supports enhancement mode switching typical of modern power MOSFETs.

The MOSFET offers a high maximum power dissipation rating of 66 W, making it suitable for medium power applications such as power regulation, motor control, and switching circuits. Operating temperature range spans from -55°C to 150°C, ensuring durability under various environmental conditions.

Its typical gate charge at rated gate voltage is 58 nC, enabling fast switching with reduced losses. The low maximum drain-source resistance of 205 mΩ reduces conduction power losses, improving overall system efficiency. Package dimensions of approximately 6.73 mm length, 6.22 mm width, and 2.39 mm height enable compact PCB layouts.

This MOSFET is built using Infineon's HEXFET technology renowned for benchmark on resistance and reliability. It is not specifically automotive grade but fits well in industrial, consumer electronics, and power management applications where efficient and reliable switching is needed.

This device is a P-Channel enhancement mode MOSFET optimized for surface mounting. It supports 13 A continuous current and 100 V drain-source voltage. Power dissipation up to 66 W ensures handling of medium power loads. Broad operating temperature from -55°C to 150°C suits harsh environments.

Low 205 mΩ Rds resistance contributes to high efficiency switching. 3-pin TO-252 package allows compact and robust PCB integration. Infineon's HEXFET design delivers reliable performance across applications.

Ideal uses include industrial power control, bridging circuits, power regulators, and electronic switching where robust P-Channel MOSFET performance is required. Explore more Infineon MOSFETs and discrete semiconductor products at EnvMart.

Infineon HEXFET Type P-Channel MOSFET 13 A 100 V Enhancement 3-Pin TO-252 IRFR5410TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 13 A.

It can withstand a maximum drain-source voltage of 100 V.

The maximum power dissipation is rated at 66 W.

This MOSFET operates within a temperature range from -55°C to 150°C.

It is presented in a TO-252 package type.

The typical gate charge is 58 nC at the rated gate-source voltage.

The maximum drain-source resistance (Rds) is 205 mΩ.

This model has a pin count of 3.

It features a P-Channel enhancement mode.

The dimensions are approximately 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

It is suitable for applications such as power regulation, motor control, and switching circuits.

The maximum gate-source voltage range is from -20 V to +20 V.

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