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Infineon HEXFET N-Channel MOSFET 30A 200V Enhancement, 3-Pin TO-247 IRFP250MPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IRFP250MPBF |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 123nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 30 amperes for robust operation.
- Drain-source voltage rating of 200 volts supports various switching tasks.
- 3-pin TO-247 package ensures reliable through-hole mounting.
- Enhancement mode operation with low on-resistance reduces power loss.
- High maximum power dissipation of 214 watts for thermal reliability.
- Wide operating temperature range from -55°C to 175°C allows use in harsh environments.
- Fully avalanche-rated for over-voltage protection and ruggedness.
- Typical gate charge of 123 nanocoulombs enables efficient switching.
Product Description
Infineon IRFP250MPBF is a HEXFET N-channel MOSFET ideal for high performance and efficient switching in various industrial and electronic applications. Rated for a maximum continuous drain current of 30A and a drain-source voltage of 200V, this device features a 3-pin TO-247 package designed for through-hole mounting and effective heat dissipation.
This MOSFET operates in enhancement mode and has a low on-state resistance of 75 milliohms, which significantly reduces conduction losses and improves system efficiency. With a maximum power dissipation of 214W and a broad operating temperature range from -55°C to 175°C, it ensures reliable and stable performance even under demanding thermal conditions.
The device is fully avalanche-rated, providing protection against transient voltages and enhancing durability in industrial and mechanical contexts. The typical gate charge of 123nC allows swift and efficient switching with moderate gate drive voltages, simplifying integration into power converters, motor controllers, and renewable energy systems such as solar inverters.
Applications include high-frequency switching power supplies, industrial drives, automotive electronics where permitted, and general automation control circuits. Its robust features make it suitable for industries requiring reliable semiconductor components with outstanding electrical and thermal characteristics.
Maximum continuous drain current of 30A for heavy load operation. Drain-source voltage rating of 200V for diverse power applications. Placed in a TO-247 through-hole package ensuring easy mounting and thermal management.
Low Rds(on) value reduces power losses and heat generation. Fully avalanche rated for enhanced over-voltage ruggedness. Wide operating temperature range (-55°C to 175°C) for stability in harsh conditions. Typical gate charge of 123nC facilitating efficient switching performance.
Suitable for power supplies, converters, motor control, and renewable energy applications. Designed for industrial, laboratory, HVAC, manufacturing, and electronic sectors. Explore more Infineon semiconductor components and power electronics at EnvMart for high-quality, reliable industrial-grade solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 30A, allowing for robust operation in various applications.
This MOSFET has a drain-source voltage rating of 200V, making it suitable for diverse power applications.
It is housed in a 3-pin TO-247 package, which ensures reliable through-hole mounting and effective heat dissipation.
The maximum power dissipation is 214W, providing thermal reliability in demanding conditions.
It operates within a wide temperature range from -55°C to 175°C, allowing stability in harsh environments.
The typical gate charge is 123 nanocoulombs, enabling efficient switching performance.
The maximum drain-source resistance (Rds(on)) is 75 milliohms, which helps reduce conduction losses.
Yes, it is fully avalanche-rated, providing protection against transient voltages and enhancing durability.
This model is suitable for high-frequency switching power supplies, industrial drives, automotive electronics, and general automation control circuits.
The maximum gate-source voltage is -20V to +20V, allowing for flexible gate drive configurations.
The dimensions are 21.1mm in height, 16.13mm in length, and 5.2mm in width.
It uses an N-channel configuration, which is common for enhancement mode operation in power applications.
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