Infineon HEXFET N-Channel MOSFET 43 A 100 V Enhancement 3-Pin TO-220 IRFI4410ZPBF

Infineon IRFI4410ZPBF is a HEXFET N-Channel MOSFET designed for power electronic applications requiring efficient switching with a maximum continuous drain current of 43 A and a drain-source voltage rating of 100 V. Housed in a durable TO-220 package with 3 pins, this enhancement-mode device offers low on-resistance ensuring minimized conduction losses for improved system efficiency.

The MOSFET supports a maximum power dissipation of 47 W and operates reliably across a broad temperature spectrum from -55°C up to 175°C, making it suitable for demanding industrial and automotive environments. Its typical gate charge of 81 nC helps reduce switching losses, contributing to energy efficiency in circuits.

The device's compact form factor, with height 16.13 mm, length 10.75 mm, and width 4.83 mm, enables easy integration into through-hole mounted PCB designs. It is an ideal component for power management, switching regulators, motor drivers, and other semiconductor circuit applications requiring robust performance under high current and voltage conditions.

Manufactured under Infineon's HEXFET technology, this N-Channel MOSFET merges high-quality electrical characteristics with reliability and thermal stability to provide enhanced protection features and extended lifecycle.

This product is primarily used in industrial electronics, power supplies, automotive controls, and manufacturing equipment. It complies with no specific approvals or automotive standards but is widely trusted for commercial and industrial use.

Helps reduce conduction losses with benchmark low on-resistance. Enhanced N-Channel device suitable for efficient power switching. Through-hole mount type with 3 pins for robust industrial applications. Maximum power dissipation of 47 W supports heavy-duty usage.

Wide operating temperature range from -55°C to 175°C. Typical gate charge of 81 nC reduces switching losses. Compact dimensions: 16.13 mm height, 10.75 mm length, and 4.83 mm width. Designed for industrial, power electronics, and automotive-grade applications.

Manufactured in China with new product condition. Explore further products in the MOSFET category at EnvMart for comprehensive solutions in semiconductor devices.