Infineon HEXFET Type P-Channel MOSFET, 55 V, 18 A, 57 W Power Dissipation, 3-Pin TO-252 IRFR5505TRPBF

Infineon's IRFR5505TRPBF is a HEXFET Type P-Channel MOSFET engineered for efficient power switching applications requiring up to 18 A continuous current and 55 V drain-source voltage. Packaged in a compact 3-pin TO-252 surface mount format, it combines high power dissipation capability of 57 W with robust thermal performance.

This device operates in enhancement mode with a low maximum drain-source resistance of 110 milliohms, minimizing conduction losses and improving overall system efficiency. The maximum operating junction temperature reaches 150°C, supporting reliable operation in demanding environments.

The typical gate charge of 32 nC at a gate-source voltage of 10 V ensures fast switching characteristics suitable for various power management designs. Its gate-source voltage rating of -20 V to +20 V provides ample margin for standard circuits.

With physical dimensions of 6.73 mm in length, 6.22 mm width, and a height of 2.39 mm, the MOSFET fits well in compact layouts while enabling effective heat dissipation through surface mounting.

Infineon's HEXFET MOSFETs are widely used in industrial power electronics, automotive electronics (though this specific model is not automotive-standard qualified), commercial devices, and general electrical circuits requiring precise and efficient power control.

This HEXFET device operates in enhancement mode and features low drain-source on-resistance of 110 milliohms. The MOSFET supports maximum operating temperatures up to 150°C and a gate-source voltage range of -20 V to +20 V.

Typical gate charge is 32 nC at 10 V gate drive, enabling efficient switching performance. The device dimensions measure 6.73 mm length, 6.22 mm width, and 2.39 mm height suitable for compact PCB layouts. It is designed for surface mount technology to optimize thermal management and assembly efficiency.

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