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| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 16.13mm |
| Length | 10.75mm |
| Model | IRFI4110GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 72A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 61W |
| Typical Gate Charge Qg @ Vgs | 190nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Infineon IRFI4110GPBF HEXFET N-Channel MOSFET is a high-performance semiconductor component designed for efficient power switching applications. Featuring a maximum continuous drain current of 72 A and a drain-source voltage rating of 100 V, this MOSFET operates in enhancement mode with a 3-pin TO-220 through-hole mount package that facilitates excellent heat dissipation and ease of installation in electronic circuits.
This MOSFET exhibits a low drain-source on-resistance (Rds) of only 4.5 milliohms, significantly reducing conduction losses and improving overall system efficiency. With a maximum power dissipation rating of 61 W and ability to withstand operating temperatures from -55°C up to +175°C, it is suitable for use in environments with rigorous thermal requirements.
The device includes a typical gate charge of 190 nC at a gate-source voltage threshold, enabling fast switching capabilities essential for high-frequency applications. It also features a forward voltage drop of 1.3 V and a maximum gate-source voltage tolerance of ±20 V, ensuring robust operation and reliability under varying electrical conditions.
Applications of this MOSFET include high-efficiency synchronous rectifiers, uninterruptible power supply (UPS) systems, and hard-switched circuits operating at high speeds. Its rugged construction makes it well-suited for industrial automation, power electronics, and mechanical engineering sectors requiring dependable semiconductor performance.
Features a low Rds(on) of 4.5 milliohms for improved efficiency. Designed for enhancement mode operation suitable for high-performance switching. Maximum power dissipation rating of 61 W ensures robust thermal handling. Capable of operation from -55°C to +175°C for demanding environments.
Typical gate charge of 190 nC allows fast switching at Vgs operation. Maximum gate-source voltage tolerance of ±20 V enhances reliability. Forward voltage drop of 1.3 V supports efficient conduction. 3-pin through-hole mount package for easy integration and thermal management.
Ideal for synchronous rectification, uninterruptible power supplies, and high-frequency hard-switched circuits.
This product is made in China, representing the quality standards of Infineon. Its reliable characteristics and robust design make it a preferred choice for demanding electronic component needs on EnvMart.
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