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Infineon HEXFET N-Channel MOSFET 72 A 100 V Enhancement Mode 3-Pin TO-220 IRFI4110GPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Height 16.13mm
Length 10.75mm
Model IRFI4110GPBF
Width 4.83mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 72A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 4.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 61W
Typical Gate Charge Qg @ Vgs 190nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • Features a low Rds(on) of 4.5 milliohms for improved efficiency.
  • Designed for enhancement mode operation suitable for high-performance switching.
  • Maximum power dissipation rating of 61 W ensures robust thermal handling.
  • Capable of operation from -55°C to +175°C for demanding environments.
  • Typical gate charge of 190 nC allows fast switching at Vgs operation.
  • Maximum gate-source voltage tolerance of ±20 V enhances reliability.
  • Forward voltage drop of 1.3 V supports efficient conduction.
  • 3-pin through-hole mount package for easy integration and thermal management.

Product Description

Infineon IRFI4110GPBF HEXFET N-Channel MOSFET is a high-performance semiconductor component designed for efficient power switching applications. Featuring a maximum continuous drain current of 72 A and a drain-source voltage rating of 100 V, this MOSFET operates in enhancement mode with a 3-pin TO-220 through-hole mount package that facilitates excellent heat dissipation and ease of installation in electronic circuits.

This MOSFET exhibits a low drain-source on-resistance (Rds) of only 4.5 milliohms, significantly reducing conduction losses and improving overall system efficiency. With a maximum power dissipation rating of 61 W and ability to withstand operating temperatures from -55°C up to +175°C, it is suitable for use in environments with rigorous thermal requirements.

The device includes a typical gate charge of 190 nC at a gate-source voltage threshold, enabling fast switching capabilities essential for high-frequency applications. It also features a forward voltage drop of 1.3 V and a maximum gate-source voltage tolerance of ±20 V, ensuring robust operation and reliability under varying electrical conditions.

Applications of this MOSFET include high-efficiency synchronous rectifiers, uninterruptible power supply (UPS) systems, and hard-switched circuits operating at high speeds. Its rugged construction makes it well-suited for industrial automation, power electronics, and mechanical engineering sectors requiring dependable semiconductor performance.

Features a low Rds(on) of 4.5 milliohms for improved efficiency. Designed for enhancement mode operation suitable for high-performance switching. Maximum power dissipation rating of 61 W ensures robust thermal handling. Capable of operation from -55°C to +175°C for demanding environments.

Typical gate charge of 190 nC allows fast switching at Vgs operation. Maximum gate-source voltage tolerance of ±20 V enhances reliability. Forward voltage drop of 1.3 V supports efficient conduction. 3-pin through-hole mount package for easy integration and thermal management.

Ideal for synchronous rectification, uninterruptible power supplies, and high-frequency hard-switched circuits.

This product is made in China, representing the quality standards of Infineon. Its reliable characteristics and robust design make it a preferred choice for demanding electronic component needs on EnvMart.

Infineon HEXFET N-Channel MOSFET 72 A 100 V Enhancement Mode 3-Pin TO-220 IRFI4110GPBF
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Frequently Asked Questions

The maximum continuous drain current for the IRFI4110GPBF is 72 A.

This model has a maximum drain-source voltage rating of 100 V.

It features a low drain-source on-resistance (Rds) of 4.5 milliohms.

The maximum power dissipation rating is 61 W, allowing for robust thermal handling.

It can operate in temperatures ranging from -55°C to +175°C.

The typical gate charge is 190 nC, which enables fast switching capabilities.

The forward voltage drop is 1.3 V, supporting efficient conduction.

It has a maximum gate-source voltage tolerance of ±20 V, enhancing reliability.

This model comes in a 3-pin TO-220 through-hole mount package.

It is suitable for applications such as high-efficiency synchronous rectifiers and uninterruptible power supply (UPS) systems.

The channel type is N-channel, designed for enhancement mode operation.

The dimensions are 16.13 mm in height, 10.75 mm in length, and 4.83 mm in width.

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