Infineon HEXFET N-Channel MOSFET 18 A Continuous Drain Current 40 V Drain-Source Voltage SOIC 8-Pin IRF7842TRPBF

The Infineon IRF7842TRPBF is a HEXFET N-Channel MOSFET engineered for superior power management with a maximum continuous drain current of 18 A and a maximum drain-source voltage of 40 V. Housed in an 8-pin SOIC surface mount package, this device is optimized for professional electronic applications requiring compact size and high efficiency.

Its low on-resistance of 5.9 mΩ at 4.5 V gate voltage significantly improves efficiency by minimizing conduction losses during operation. With a typical gate charge of 33 nC, switching times are reduced, making it well-suited for synchronous MOSFET circuits and isolated or non-isolated DC-DC converters.

The device supports a wide operating temperature range from -55°C to +150°C, ensuring reliable performance even under demanding thermal conditions commonly found in industrial, automotive, and consumer electronics environments.

Infineon’s HEXFET technology enhances ruggedness and power capability, and this particular MOSFET is avalanche rated for added electrical resilience. Its compact SOIC package with surface mount compatibility aids straightforward PCB assembly and integration into complex circuits.

Typical applications include synchronous rectification for notebook processors, power stages in isolated and non-isolated DC-DC converters, and other high current switching scenarios in power electronics.

This MOSFET supports a maximum continuous drain current of 18 amperes. Maximum drain-source voltage rating is 40 volts for various high-voltage applications. Package type is SOIC with 8 pins, optimized for surface mount technology.

Drain-source on-resistance rated at just 5.9 milliohms at 4.5 V drive improves power efficiency. Typical gate charge of 33 nanocoulombs minimizes switching losses during rapid operation. Temperature operation ranges from -55°C to 150°C ensuring reliability in harsh environments.

Enhancement mode N-channel device suitable for synchronous rectification and power conversion designs. Maximum power dissipation of 2.5 watts accommodates moderate heat dissipation needs. Explore more in our Electronics & Electricals category for a wide selection of discrete semiconductors and MOSFETs designed to meet diverse industrial and commercial requirements.