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Infineon Isolated HEXFET 2 Type P and N-Channel MOSFET 30 V, 3.5 A, 2 W Power Dissipation, SOIC 8-Pin IRF9952TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF9952TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 6.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.82V |
| Transistor Configuration | Isolated |
Key Features
- Enhancement mode operation with isolated transistor configuration.
- Surface mount SOIC 8-pin package for easy PCB integration.
- Low maximum drain-source resistance of 400 milliohms reduces power loss.
- Operation temperature range from -55°C up to 150°C ensures durability.
- Maximum power dissipation rating is 2 Watts.
- Maximum gate-source voltage ±20 V enables robust switching.
- Typical gate charge of 6.1 nC improves switching performance.
- Reliable for power management, industrial automation, and consumer electronics applications.
Product Description
Infineon IRF9952TRPBF is a dual-channel isolated HEXFET MOSFET featuring Type P and Type N channels in a compact SOIC 8-pin surface mount package. It is designed for efficient power switching with a maximum continuous drain current of 3.5 A and maximum drain-source voltage of 30 V.
This device operates in enhancement mode and provides a maximum power dissipation of 2 Watts. The isolate transistor configuration reduces cross-talk, ensuring clean signal operation, suitable for sensitive electronic applications.
The MOSFET supports a wide operating temperature range from -55°C to 150°C, making it reliable under harsh environmental conditions. Its low on-resistance of 400 milliohms contributes to improved energy efficiency by reducing power losses during conduction.
The IRF9952TRPBF includes a typical gate charge of 6.1 nC and a gate-source voltage rating of ±20 V, enabling high-frequency switching capabilities while protecting the device against voltage spikes.
The compact package dimensions (length 5 mm, width 4 mm, height 1.5 mm) facilitate easy integration onto surface mounting PCBs, optimizing space and thermal management.
Applications include power management solutions, electric vehicle systems, renewable energy devices, industrial automation systems, and various consumer electronics requiring efficient and reliable switching components.
Enhancement mode isolated HEXFET dual-channel MOSFET. 3.5 A continuous drain current at 30 V maximum voltage. Low drain-source resistance of 400 mΩ for power efficiency. Surface-mount SOIC 8-pin package for PCB compatibility.
Wide operating temperature range from -55°C to +150°C. Typical gate charge of 6.1 nC for optimized switching performance. Maximum power dissipation of 2 Watts. Compact dimensions enabling flexible electronic designs. Designed to minimize interference and cross-talk between channels.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.5 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation rating for this model is 2 Watts.
The typical gate charge for this MOSFET is 6.1 nC.
It operates within a temperature range from -55°C to 150°C.
The dimensions of the package are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This model features Type P and Type N channels in a dual-channel configuration.
The maximum gate-source voltage for this device is ±20 V.
The maximum drain-source resistance is 400 milliohms.
This model features an isolated transistor configuration.
It is suitable for power management, industrial automation, and consumer electronics applications.
The isolated configuration reduces cross-talk, ensuring clean signal operation for sensitive applications.
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