Infineon OptiMOS 3 N-Channel MOSFET, 50 A, 60 V Enhancement Mode, 3-Pin TO-263 IPB081N06L3GATMA1

Infineon IPB081N06L3GATMA1 is a high-performance N-channel MOSFET utilizing OptiMOS 3 technology designed for robust power management and switching applications. This device is housed in a compact 3-pin TO-263 surface mount package optimized for space-constrained designs.

With a maximum continuous drain current of 50 A and drain-to-source voltage rating of 60 V, this MOSFET supports high current conduction with low conduction losses, thanks to its low on-resistance of 8.1 mΩ. This makes it ideal for switching power supplies, DC/DC converters, and motor control circuits demanding high efficiency and thermal performance.

The device operates reliably over a wide temperature range from -55°C to 175°C and withstands gate-source voltages from -20 V to +20 V, allowing for flexible drive conditions. Typical gate charge of 22 nC facilitates fast switching speeds essential for modern power electronics.

Infineon OptiMOS 3 MOSFETs are engineered to improve energy efficiency and power density, meeting the rigorous standards of industrial, automotive (non-AEC-Q101 in this case), and consumer electronics markets. The Pb-free plating also ensures compliance with environmental regulations.

Compact 3-pin TO-263 surface mount package. Maximum continuous drain current: 50 A. Drain-source voltage rating: 60 V. Low on-resistance of 8.1 mΩ for reduced power loss. Gate voltage tolerance up to ±20 V. Operating temperature range from -55°C to 175°C.

Typical gate charge of 22 nC for efficient switching. OptiMOS 3 technology for enhanced efficiency and power density. Lead-free plating for environmental compliance.

Commonly utilized across industrial power regulation, laboratory power supplies, HVAC controls, manufacturing automation, and consumer electronic devices, the IPB081N06L3GATMA1 provides dependable performance for demanding applications.

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