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Infineon OptiMOS T2 N-Channel Power Transistor, 80A, 60V Enhancement Mode, 3-Pin TO-263 IPB80N06S4L05ATMA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10mm |
| Model | IPB80N06S4L05ATMA2 |
| Width | 9.25mm |
| Mount Type | Surface |
| Series | OptiMOS -T2 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 83nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon IPB80N06S4L-05Brand | Infineon |
Key Features
- OptiMOS T2 series power transistor designed for surface mounting in TO-263 package.
- Features enhancement mode channel with maximum drain-source resistance of 4.8 milliohms.
- Maximum power dissipation capability of 107 watts ensures robust performance.
- Wide operating temperature range from -55°C to 175°C supports automotive and industrial use.
- Complies with RoHS and AEC-Q101 automotive quality standards.
- Typical gate charge of 83nC and gate-source voltage range of -16V to +16V enable efficient switching.
- Forward voltage drop of 1.3V optimizes conduction losses.
Product Description
Infineon IPB80N06S4L05ATMA2 is a high-performance OptiMOS T2 N-Channel Power Transistor designed for surface mounting applications. It supports a maximum continuous drain current of 80 amperes and withstands drain-source voltages up to 60 volts in enhancement mode operation. Packaged in a 3-pin TO-263 format, this device offers a compact solution for power regulation in automotive, industrial, and computing fields.
The transistor features a low drain-source resistance of 4.8 milliohms, enabling high efficiency and reduced conduction losses. With a maximum power dissipation rating of 107 watts, it can sustain significant power levels while maintaining stability over a wide thermal range from -55°C up to 175°C.
Infineon's OptiMOS T2 series meets stringent quality standards including RoHS compliance and AEC-Q101 automotive certification, making it ideal for high-reliability applications. The device's typical gate charge of 83 nano-Coulombs at Vgs and a gate-source voltage tolerance of ±16 volts allow for effective control in switching environments.
The transistor's compact dimensions (10 mm length, 9.25 mm width, and 4.4 mm height) facilitate use in constrained PCB layouts without compromising thermal performance. A forward voltage drop of 1.3 volts further enhances efficiency in power regulation circuits.
OptiMOS T2 series N-Channel power transistor. 80A maximum continuous drain current and 60V maximum drain-source voltage. Low Rds(on) of 4.8mΩ ensures high efficiency. High power dissipation rating of 107W for demanding applications.
Wide operating temperature from -55°C to 175°C. RoHS compliant and AEC-Q101 automotive standard qualified. Compact TO-263 surface mount package. Typical gate charge of 83nC supports fast switching. Forward voltage of 1.3V reduces conduction losses.
This power transistor is widely used in automotive electronics, power management, computing voltage regulation, and industrial control systems. Its efficient switching and thermal characteristics make it suitable for high-density and energy-critical designs. Explore more Infineon Semiconductor components on EnvMart to power your next project with reliability and performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 amperes.
It can withstand a maximum drain-source voltage of 60 volts.
The maximum drain-source resistance is 4.8 milliohms, which enables high efficiency.
The typical gate charge is 83 nano-Coulombs at Vgs.
The forward voltage drop is 1.3 volts, which helps optimize conduction losses.
The dimensions are 10 mm in length, 9.25 mm in width, and 4.4 mm in height.
It operates within a temperature range of -55°C to 175°C.
It complies with RoHS and AEC-Q101 automotive quality standards.
This model supports surface mounting in a TO-263 package.
The maximum power dissipation capability is 107 watts.
The gate-source voltage range is from -16V to +16V.
It is commonly used in automotive electronics, power management, computing voltage regulation, and industrial control systems.
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