Infineon Dual N/P-Channel Isolated HEXFET MOSFET 7.3A 30V SOIC 8-Pin Surface Mount IRF7389TRPBF

Infineon IRF7389TRPBF is a dual N-channel and P-channel isolated HEXFET MOSFET designed for efficient power switching in compact electronic circuits. With a maximum continuous drain current of 7.3 A and a maximum drain-source voltage of 30 V, this component supports a wide range of low voltage power applications. The device comes in an 8-pin SOIC surface mount package, ensuring compatibility with modern PCB assembly techniques.

Featuring an enhancement mode channel design and a low maximum drain-source resistance of 98 milliohms, the IRF7389TRPBF offers minimal conduction losses and improved thermal efficiency. It can dissipate up to 2.5 W of power, with a wide operating temperature range from -55°C to 150°C, making it suitable for industrial and commercial electronics environments.

The transistor includes a typical gate charge of 22 nC at the gate voltage, which facilitates fast switching, ideal for high-frequency power circuits. Its isolated HEXFET transistor configuration integrates two elements per chip, optimizing space and performance for high component density applications where PCB real estate is limited.

This product is manufactured in the Philippines, adhering to Infineon's quality standards. Although not certified for automotive applications, it suits laboratory, industrial control, and consumer electronics projects requiring reliable MOSFET switching devices.

This MOSFET device combines dual N and P channel transistors in one package for versatile circuit design. Its surface mount SOIC package streamlines integration into PCB layouts with automatic assembly. Low on-resistance enhances power efficiency and heat management under typical loads.

Robust temperature tolerance supports reliable operation in harsh environments. Fast gate charge response optimizes switching speed and efficiency for power devices. Power dissipation rating ensures stable performance handling typical power circuit demands.

Compact transistor height (1.5 mm), length (5 mm), and width (4 mm) enable miniaturized PCB designs. Ideal for industrial electronics, power management, consumer devices, and laboratory applications. Explore more Infineon semiconductor solutions and discrete MOSFET devices in the EnvMart catalog for your next project.