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Infineon Isolated HEXFET 2 N-Channel MOSFET, 3.6 A Continuous Drain Current, 80 V Drain Source Voltage IRF7380TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7380TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 73mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| Transistor Configuration | Isolated |
Key Features
- Industry-standard 8-pin SOIC surface mount package ensures seamless PCB integration.
- Low on-resistance of 73 milliohms optimizes power efficiency in switching applications.
- Enhancement mode operation for improved performance in power regulation circuits.
- Typical gate charge of 15 nC enables fast switching speeds for high-frequency operations.
- Rated for maximum power dissipation of 2 watts supporting thermal stability.
- Wide operating temperature range from -55°C to 150°C suits harsh industrial environments.
- Suitable for high-frequency DC-DC converters and battery management systems.
- Perfect for motor controllers requiring efficient switching performance.
Product Description
Infineon IRF7380TRPBF Isolated HEXFET 2 N-Channel MOSFET features a continuous drain current rating of 3.6 A and a maximum drain source voltage of 80 V, designed specifically for power electronic applications requiring efficient switching and power conversion.
This device's isolated transistor configuration and surface mount 8-pin SOIC package contribute to compact PCB layouts and ease of assembly in high-density applications. The MOSFET operates in enhancement mode and offers a low drain source resistance of 73 milliohms, minimizing conduction losses and promoting overall energy efficiency.
With a maximum power dissipation of 2 watts and a broad operating temperature range from -55°C to 150°C, the IRF7380TRPBF is engineered to handle demanding industrial environments and maintain reliable performance. Its low typical gate charge of 15 nC allows rapid switching, making it ideal for high-frequency DC-DC converter circuits and power supply units.
Industry-standard 8-pin SOIC surface mount package ensures compatibility and easy mounting. Low Rds(on) of 73 milliohms reduces power losses and heat generation. Enhancement mode operation improves switching characteristics.
Low gate charge (15 nC) facilitates fast switching performance. Maximum power dissipation of 2 W promotes thermal stability. Wide operating temperature range from -55°C to 150°C suits industrial applications. Ideal for high-frequency DC-DC converters and battery management systems.
Suitable for motor controllers and inductive load drivers like relays. RoHS compliant and halogen-free for environmental safety.
This MOSFET's robust performance and surface mount format make it suitable for industrial, laboratory, manufacturing, HVAC, and electronic system design uses requiring efficient power management and switching technology.
Explore more high-quality MOSFETs and discrete semiconductors in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.6 A.
It has a maximum drain source voltage of 80 V.
The typical gate charge is 15 nC, which allows for fast switching speeds.
The low drain source resistance is 73 milliohms, optimizing power efficiency.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
It comes in an industry-standard 8-pin SOIC surface mount package.
The maximum power dissipation rating is 2 watts, supporting thermal stability.
This model is suitable for high-frequency DC-DC converters and battery management systems, as well as motor controllers.
The height is 1.5 mm and the width is 4 mm.
It is an N-channel MOSFET operating in enhancement mode.
The maximum gate source voltage is -20V to +20V.
The country of origin for this model is India.
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