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Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC IRF7316TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7316TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 98mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.78V |
| Transistor Configuration | Isolated |
Key Features
- Maximum continuous drain current of 4.9 A for reliable performance.
- Maximum drain-source voltage of 30 V suitable for medium voltage applications.
- Enhancement mode transistor with isolated HEXFET configuration.
- Surface mount SOIC package with 8 pins for compact PCB design.
- Low drain-source resistance of 98 mΩ reduces power loss.
- Maximum power dissipation rating of 2 W ensures thermal reliability.
- Operating temperature range from -55°C to 150°C supports harsh environments.
- Typical gate charge of 23 nC at Vgs for efficient switching.
Product Description
Infineon IRF7316TRPBF is an isolated HEXFET P-Channel MOSFET designed to deliver optimized conduction efficiency and power handling for power electronics applications. It features an enhancement mode transistor configuration with a maximum continuous drain current of 4.9 A and a maximum drain-source voltage of 30 V. Housed in a compact 8-pin SOIC surface mount package, this MOSFET offers low on-resistance of 98 mΩ, which minimizes conduction losses and improves overall circuit efficiency.
Engineered to operate reliably over a wide temperature range of -55°C to 150°C, the IRF7316TRPBF is suitable for demanding environments often found in industrial, automotive (non-AEC-Q101), and consumer electronics. The transistor's typical gate charge of 23 nC at gate-source voltage enables fast switching capabilities for high-frequency applications.
The package dimensions of 5 mm length, 4 mm width, and 1.5 mm height facilitate integration into dense PCB layouts. This MOSFET supports enhancement channel mode operation, making it ideal for load switching, power management, and signal amplification in power supply circuits.
Usage of Infineon's HEXFET technology ensures reliable performance, reduced power losses, and enhanced thermal management in electronic designs. While this device is not automotive qualified by AEC-Q101 standards, it is suitable for a variety of power electronic circuits and semiconductor applications in industrial and commercial sectors.
Maximum continuous drain current of 4.9 A. Maximum drain-source voltage of 30 V. Low on-resistance of 98 mΩ reduces power losses. Enhancement mode isolated HEXFET configuration. Compact 8-pin SOIC surface mount package. Wide operating temperature range of -55°C to 150°C.
Typical gate charge of 23 nC at gate-source voltage. Package dimensions: 5 mm x 4 mm x 1.5 mm (LxWxH). Not automotive standard compliant.
The Infineon IRF7316TRPBF P-Channel MOSFET is part of the discrete semiconductor product line, specifically optimized for efficient power switching. It is suitable for use in industrial power electronics, laboratory equipment, manufacturing hardware, and commercial electronic devices. For more options in MOSFETs and semiconductor components, explore the extensive Infineon product range available through EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon IRF7316TRPBF is 4.9 A.
This model has a maximum drain-source voltage of 30 V, making it suitable for medium voltage applications.
The typical gate charge at gate-source voltage for the IRF7316TRPBF is 23 nC, which supports efficient switching.
The package dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It operates reliably over a wide temperature range from -55°C to 150°C, suitable for harsh environments.
This model features an isolated HEXFET configuration and operates in enhancement mode.
The maximum power dissipation rating for the IRF7316TRPBF is 2 W, ensuring thermal reliability.
It has a low on-resistance of 98 mΩ, which helps to reduce power losses.
The IRF7316TRPBF has 8 pins, suitable for compact PCB design.
This model is suitable for load switching, power management, and signal amplification in power supply circuits.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V.
This device is not automotive qualified by AEC-Q101 standards but is suitable for industrial and commercial applications.
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