Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon HEXFET Type P-Channel MOSFET 10.5 A 40 V Enhancement Mode 8-Pin SOIC IRF7240TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.5mm
Length 5mm
Model IRF7240TRPBF
Width 4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 10.5A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 25mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 73nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Supports maximum continuous drain current of 10.5 A.
  • Operates in enhancement mode for improved performance.
  • Compact 8-Pin SOIC surface mount package.
  • Low on-resistance of 25 milliohms reduces power loss.
  • Wide operating temperature range from -55°C to 150°C.
  • Typical gate charge of 73 nC suitable for high-frequency switching.
  • Maximum drain-source voltage rating of 40 V ensures reliable operation.
  • Designed with customised leadframe for enhanced thermal performance.

Product Description

Infineon IRF7240TRPBF is a HEXFET type P-Channel MOSFET designed for efficient power management solutions. Featuring a maximum continuous drain current of 10.5 A and a maximum drain-source voltage of 40 V, this enhancement mode device is ideal for reliable surface-mount applications within electronic circuits.

The component is housed in an 8-pin SOIC package measuring 5 mm in length, 4 mm in width, and 1.5 mm in height. Its low on-resistance of 25 milliohms minimizes conduction losses, while the typical gate charge of 73 nC at 10 V enables effective operation in high-frequency switching environments.

Operating temperature ranges from -55°C to 150°C allow its use in demanding industrial and automotive applications. The customised leadframe improves thermal management to maintain junction temperatures within specified limits.

This MOSFET finds applications in battery management systems, load management circuits, automotive electronics where compact size and efficiency are critical, and power supply units that demand robust load handling.

Supports high current loads up to 10.5 A for demanding power tasks. Enhancement mode operation provides superior switching control. Compact, standard 8-pin SOIC package for surface mounting. Exceptional low Rds(on) of 25 mΩ for reduced power loss and heat generation.

Wide temperature rating from -55°C to 150°C. Typical gate charge suited for high frequency circuits. Optimized thermal performance with customised leadframe. Suits power management and automotive applications.

This Infineon MOSFET is manufactured to meet rigorous quality standards and is ideal for use in industrial, automotive, and commercial electronics systems. Browse the Electronics & Electricals category for similar MOSFETs and power management components available at EnvMart.

Infineon HEXFET Type P-Channel MOSFET 10.5 A 40 V Enhancement Mode 8-Pin SOIC IRF7240TRPBF
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 10.5 A.

This MOSFET has a maximum drain-source voltage rating of 40 V.

The typical gate charge at 10 V is 73 nC, making it suitable for high-frequency switching applications.

It features a low on-resistance of 25 milliohms, which helps reduce power loss.

The MOSFET is housed in an 8-pin SOIC package measuring 5 mm in length, 4 mm in width, and 1.5 mm in height.

It operates within a wide temperature range from -55°C to 150°C.

This model supports surface mounting.

The maximum power dissipation for this MOSFET is 2.5 W.

It is suitable for battery management systems, load management circuits, automotive electronics, and power supply units.

This device is a P-Channel MOSFET, designed for enhancement mode operation.

The maximum gate-source voltage for this model is -20 to +20 V.

The country of origin for this MOSFET is India.

Related Products

Other Products from this brand

$1.20
$1.16 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$1.20
$1.16
Tax included