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Infineon OptiMOS 3 N-Channel MOSFET, 7 A, 200 V Enhancement Mode, 8-Pin TDSON BSC22DN20NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC22DN20NS3GATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 225mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 34W |
| Typical Gate Charge Qg @ Vgs | 4.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- OptiMOS 3 series for enhanced power efficiency.
- Maximum continuous drain current of 7 amperes.
- Maximum drain-source voltage of 200 volts for robust switching.
- Surface-mount TDSON package with 8 pins.
- Low Rds(on) resistance of 225 milliohms to minimize power loss.
- Maximum power dissipation up to 34 watts.
- Typical gate charge of 4.2 nanoCoulombs at Vgs.
- Wide operating temperature range from -55°C to 150°C.
Product Description
Infineon BSC22DN20NS3GATMA1 is a high-performance OptiMOS 3 N-Channel MOSFET designed for industrial and electronic applications that demand efficient power switching and management. With a maximum continuous drain current of 7 amperes and a maximum drain-source voltage rating of 200 volts, it supports medium power loads with reliable switching performance.
This MOSFET is delivered in an 8-pin TDSON surface mount package, offering a low on-resistance of 225 milliohms to reduce conduction losses and improve overall energy efficiency in circuits. The typical gate charge is low at 4.2 nanoCoulombs, which ensures faster switching speeds and lower gate drive power consumption.
Its robust thermal performance supports operation in a wide temperature range from -55°C to 150°C, making it suitable for demanding environments in industrial machinery, power supplies, and automotive electronics that do not require automotive standard approval. The device's compact dimensions (5.35 mm length, 6.35 mm width, and 1.1 mm height) enable space-saving designs on PCBs.
Infineon's OptiMOS 3 series exemplifies advanced power MOSFET technology optimized for high efficiency and power density, delivering cost-effective solutions for electronic component integrators and system designers.
OptiMOS 3 series for enhanced power efficiency. Maximum continuous drain current of 7 amperes. Maximum drain-source voltage of 200 volts for robust switching. Surface-mount TDSON package with 8 pins. Low Rds(on) resistance of 225 milliohms to minimize power loss.
Maximum power dissipation up to 34 watts. Typical gate charge of 4.2 nanoCoulombs at Vgs. Wide operating temperature range from -55°C to 150°C. Enhanced mode gate channel design for reliable switching. Compact physical dimensions: length 5.35 mm, width 6.35 mm, height 1.1 mm.
This product is ideal for applications in industrial electronics, power management units, consumer electronics, and non-automotive systems requiring reliable MOSFET switching at medium voltage and current levels.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7 amperes.
This MOSFET has a maximum drain-source voltage rating of 200 volts.
It features a low on-resistance of 225 milliohms to minimize power loss.
The typical gate charge for this device is 4.2 nanoCoulombs at Vgs.
The dimensions of the TDSON package are 5.35 mm in length, 6.35 mm in width, and 1.1 mm in height.
The maximum power dissipation is up to 34 watts.
It operates within a wide temperature range from -55°C to 150°C.
This model uses a surface-mount TDSON package.
This MOSFET has a pin count of 8.
It is suitable for applications in industrial electronics, power management units, and consumer electronics that require reliable switching.
This device is an N-channel MOSFET.
The maximum gate-source voltage for this model is -20 to +20 volts.
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