Infineon OptiMOS P Type P-Channel MOSFET 40 A 30 V Enhancement 8-Pin TSDSON BSZ086P03NS3EGATMA1

Infineon BSZ086P03NS3EGATMA1 is a high-performance OptiMOS P Type P-Channel MOSFET designed for efficient switching applications. It features a maximum continuous drain current of 40 A and a 30 V maximum drain-source voltage rating, making it suitable for various power electronics applications. Packaged in a low-profile 8-pin TSDSON surface-mount package with a height of 1.1 mm and dimensions of 3.4 mm by 3.4 mm, this device offers excellent thermal management and compact PCB footprint.

This P-channel enhancement mode MOSFET has a low on-resistance of 13.4 milliohms which minimizes conduction losses and improves system efficiency during high current switching. It provides a maximum power dissipation of 69 W, allowing it to handle significant power loads. The device operates reliably over a wide temperature range from -55°C up to 150°C, supporting harsh industrial and automotive environments.

The typical gate charge of 43.2 nC balances fast switching speed and manageable gate drive requirements. Its gate-source voltage range of -25 V to +25 V ensures robust gate tolerance for stronger and stable gate control. The forward voltage is rated at -1.1 V. This MOSFET is ideal for point-of-load power conversion modules, including synchronous buck converters and battery management circuits. Additional applications include motor driver low-side or power-path controls and telecom/server power rails.

Designed for surface mounting on compact assemblies, the 8-pin TSDSON package enhances thermal dissipation and ease of integration. This makes the BSZ086P03NS3EGATMA1 an optimal choice for industrial, telecommunications, automotive, and commercial power electronics systems.

Low on-resistance reduces conduction losses during high current operation. Supports 40 A continuous drain current for heavy load switching. Handles power dissipation up to 69 W for high power applications. Wide temperature range from -55°C to 150°C ensures durability.

Typical gate charge of 43.2 nC optimizes switching performance. Robust gate-source voltage tolerance of ±25 V for reliable operation. Compact 8-pin TSDSON surface-mount package for efficient PCB use. Applicable in point-of-load power conversion and motor control.

Suited for telecom and server power rail systems. Explore more Infineon MOSFETs and power semiconductor components at EnvMart for diverse industrial and commercial electronics applications.