Infineon StrongIRFET N-Channel MOSFET 195 A 60 V Enhancement 3-Pin TO-220 IRFB7530PBF

Infineon IRFB7530PBF StrongIRFET N-Channel MOSFET is a robust semiconductor device engineered for high current applications demanding efficient power switching at 195 A continuous drain current and a 60 V maximum drain-source voltage. It operates in enhancement mode with a very low on-resistance of 2 milliohms, enabling high efficiency and reduced power loss in circuits.

This MOSFET features a compact 3-pin TO-220 through-hole package, making it suitable for integration into power management, motor drives, DC/DC converters, and inverter topologies. Its advanced design provides a high maximum power dissipation capability of 375 watts and a wide temperature operating range from -55°C to 175°C, ensuring durable performance in industrial, automotive, and electronic control environments.

The device has a typical gate charge of 274 nC at the gate-source voltage, allowing for rapid switching speeds and improved circuit response. It supports a maximum gate-source voltage of ±20 V to protect against gate voltage spikes. The forward voltage drop is low (1.2 V), which minimizes conduction losses. Dimensions of the component are 16.51 mm height, 10.67 mm length, and 4.83 mm width, facilitating compact and reliable installations.

It fully complies with RoHS directives, is lead-free, and has no automotive certification, suitable for general power applications. This MOSFET is ideal for brushed motor drives, synchronous rectifiers, half-bridge and full-bridge circuit topologies, and battery-powered devices. It performs reliably in both AC and DC power conversion systems, including DC/DC converters and AC/DC or DC/AC inverters.

Maximum continuous drain current of 195 amperes for high current handling. Enhancement mode N-channel type with low Rds(on) of 2 milliohms. High maximum power dissipation of 375 watts ensuring reliable operation under heavy load.

Wide operating temperature range from -55°C to +175°C suitable for harsh environments. 3-pin TO-220 package enabling through-hole mounting for easy integration. Typical gate charge of 274 nanocoulombs at Vgs for efficient switching.

Maximum gate-source voltage rating of ±20 volts for robust gate protection. Forward voltage of 1.2 volts providing low conduction loss. Compact dimensions for reliable installation in circuits. Lead-free and RoHS compliant for environmental safety.

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