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| Country of Origin | Taiwan |
|---|---|
| Diameter | 2.67mm |
| Brand | Vishay |
| Height | 1.15mm |
| Length | 5.2mm |
| Model | RGL41J-E3/96 |
| Width | 2.05mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-213AB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 250ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
Vishay RGL41J-E3/96 is a Silicon Junction Switching Diode designed for fast recovery and efficient rectification in electronic power circuits. Rated for a maximum forward current of 1 A and a peak reverse voltage of 600 V, this diode comes in a compact DO-213AB surface mount package making it suitable for space-constrained designs.
The diode features a low peak reverse recovery time of 250 ns, enabling high-speed switching applications while minimizing switching losses. It operates reliably over a wide temperature range of -65°C to 175°C, making it suitable for demanding industrial and electronic environments.
Its rugged construction with a peak non-repetitive forward surge current of 30 A allows it to withstand transient current surges, ensuring robustness in power electronics and electrical equipment.
The maximum forward voltage drop of 1.3 V contributes to lower conduction losses and higher efficiency in power management circuits. Dimensions are optimized for easy surface mounting: length 5.2 mm, width 2.05 mm, height 1.15 mm, and a diameter of 2.67 mm.
This diode is ideal for use in switching and rectification roles in industrial electronic components, power supplies, and automotive systems where fast recovery and high efficiency are critical.
Single diode configuration suitable for efficient rectification. Maximum forward current of 1 A ensures reliable performance in circuits. Surface mount package type DO-213AB for compact assembly. Low peak reverse recovery time of 250 ns enhances switching speed.
Wide operating temperature range from -65°C to 175°C for harsh environments. Peak non-repetitive forward surge current of 30 A for transient handling. Maximum forward voltage of 1.3 V for low power loss during conduction.
Compact dimensions with length 5.2 mm, width 2.05 mm, height 1.15 mm. Manufactured in Taiwan, Province Of China, ensuring reliable quality standards. Ideal for fast recovery rectifier applications in power and electronic circuits.
Explore our Electronics & Electricals category for high-quality semiconductor components and Switching Diodes suitable for diverse industrial and electronic engineering applications.
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