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Vishay Silicon Junction Switching Diode 1 A 600 V DO-213AB RGL41J-E3/96

Category Switching Diodes Brand Vishay Condition New

Specifications

Country of Origin Taiwan
Diameter 2.67mm
Brand Vishay
Height 1.15mm
Length 5.2mm
Model RGL41J-E3/96
Width 2.05mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type DO-213AB
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 250ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • Single diode configuration suitable for efficient rectification.
  • Maximum forward current of 1 A ensures reliable performance in circuits.
  • Surface mount package type DO-213AB for compact assembly.
  • Low peak reverse recovery time of 250 ns enhances switching speed.
  • Wide operating temperature range from -65°C to 175°C for harsh environments.
  • Peak non-repetitive forward surge current of 30 A for transient handling.
  • Maximum forward voltage of 1.3 V for low power loss during conduction.
  • Compact dimensions with length 5.2 mm, width 2.05 mm, height 1.15 mm.

Product Description

Vishay RGL41J-E3/96 is a Silicon Junction Switching Diode designed for fast recovery and efficient rectification in electronic power circuits. Rated for a maximum forward current of 1 A and a peak reverse voltage of 600 V, this diode comes in a compact DO-213AB surface mount package making it suitable for space-constrained designs.

The diode features a low peak reverse recovery time of 250 ns, enabling high-speed switching applications while minimizing switching losses. It operates reliably over a wide temperature range of -65°C to 175°C, making it suitable for demanding industrial and electronic environments.

Its rugged construction with a peak non-repetitive forward surge current of 30 A allows it to withstand transient current surges, ensuring robustness in power electronics and electrical equipment.

The maximum forward voltage drop of 1.3 V contributes to lower conduction losses and higher efficiency in power management circuits. Dimensions are optimized for easy surface mounting: length 5.2 mm, width 2.05 mm, height 1.15 mm, and a diameter of 2.67 mm.

This diode is ideal for use in switching and rectification roles in industrial electronic components, power supplies, and automotive systems where fast recovery and high efficiency are critical.

Single diode configuration suitable for efficient rectification. Maximum forward current of 1 A ensures reliable performance in circuits. Surface mount package type DO-213AB for compact assembly. Low peak reverse recovery time of 250 ns enhances switching speed.

Wide operating temperature range from -65°C to 175°C for harsh environments. Peak non-repetitive forward surge current of 30 A for transient handling. Maximum forward voltage of 1.3 V for low power loss during conduction.

Compact dimensions with length 5.2 mm, width 2.05 mm, height 1.15 mm. Manufactured in Taiwan, Province Of China, ensuring reliable quality standards. Ideal for fast recovery rectifier applications in power and electronic circuits.

Explore our Electronics & Electricals category for high-quality semiconductor components and Switching Diodes suitable for diverse industrial and electronic engineering applications.

Vishay Silicon Junction Switching Diode 1 A 600 V DO-213AB RGL41J-E3/96
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Frequently Asked Questions

The maximum forward current of this diode is 1 A, ensuring reliable performance in circuits.

The peak reverse recovery time for this model is 250 ns, which enhances its switching speed.

It operates reliably over a wide temperature range from -65°C to 175°C, making it suitable for harsh environments.

The dimensions of the DO-213AB package are length 5.2 mm, width 2.05 mm, and height 1.15 mm.

The maximum peak reverse repetitive voltage of this diode is 600 V.

The diode has a peak non-repetitive forward surge current rating of 30 A, allowing it to handle transient surges effectively.

The maximum forward voltage drop during conduction is 1.3 V, contributing to lower power loss.

This model uses a surface mount type, specifically the DO-213AB package, for compact assembly.

This diode has a pin count of 2.

The sub-type of this diode is Silicon Junction, designed for efficient rectification.

This diode is manufactured in Taiwan, ensuring reliable quality standards.

This diode is suitable for fast recovery rectification in power electronics and electrical equipment, including power supplies and automotive systems.

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