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onsemi Silicon Carbide (SiC) Schottky Diode 1200 V 17 A 2-Pin TO-247 Package FFSH10120A-F085

Category Schottky Diodes & Rectifiers Brand onsemi Condition New

Specifications

Country of Origin China
Diameter 6.85mm
Brand onsemi
Height 20.82mm
Length 15.87mm
Model FFSH10120A-F085
Width 4.82mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 2
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 17A
Peak Reverse Repetitive Voltage Vrrm 1200V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 400μA
Peak Non-Repetitive Forward Surge Current Ifsm 850A
Maximum Forward Voltage Vf 1.75V
onsemi 1200 V 17 A Diode Schottky 2-Pin TO-247 FFSH10120A-F085Brand onsemi

Key Features

  • Silicon Carbide technology offers superior switching performance and high reliability.
  • No reverse recovery current, enabling efficient power conversion.
  • Maximum operating temperature up to 175°C for enhanced thermal performance.
  • Mount type is through hole with a compact TO-247 package.
  • High surge current capacity with peak non-repetitive forward surge current of 850 A.
  • Automotive grade compliant with AEC-Q101 standards.
  • Ideal for automotive HEV-EV onboard chargers and DC-DC converters.
  • Package dimensions support robust industrial mounting and installation.

Product Description

onsemi FFSH10120A-F085 is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power semiconductor applications. Featuring a maximum continuous forward current of 17 A and a peak reverse repetitive voltage rating of 1200 V, this diode offers excellent switching characteristics with no reverse recovery current, making it highly efficient and suitable for fast switching frequencies.

This diode is housed in a 2-pin TO-247 package with through-hole mounting, providing ease of installation and reliable mechanical stability. It operates reliably across a temperature range from -55°C to a maximum of 175°C, enabling use in harsh industrial and automotive environments. The device is automotive compliant to the AEC-Q101 standard, ensuring suitability for hybrid and electric vehicle (HEV-EV) onboard chargers and DC-DC converters.

The FFSH10120A-F085's Silicon Carbide technology offers improved thermal performance and power density, enabling reduced system size and EMI while delivering higher efficiency. Its positive temperature coefficient and high surge current capacity enhance robustness in parallel configurations and transient conditions.

Package dimensions are approximately 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width, with a diameter of 6.85 mm. These dimensions ensure compatibility with standard industrial and automotive mounting hardware.

Silicon Carbide Schottky diode technology for next-generation power semiconductor performance. Peak reverse voltage rating of 1200 V ensures robust blocking capability. Maximum forward current of 17 A supports medium power applications.

Automotive AEC-Q101 compliant for demanding vehicular applications. Through hole TO-247 package provides durability and ease of assembly. High surge current capacity with 850 A peak non-repetitive forward surge current. Operating temperature range from -55°C to 175°C accommodates harsh conditions.

No reverse recovery current for reduced switching losses and EMI.

This diode is suitable for industrial power conversion uses including automotive electric vehicle systems, industrial power supplies, and other applications requiring high efficiency and thermal tolerance. Its design facilitates smaller, more efficient systems with improved reliability.

Explore more products in the Semiconductor category at EnvMart for comprehensive options to meet power electronics needs.

Explore more products in our Schottky Diodes & Rectifiers category.

onsemi Silicon Carbide (SiC) Schottky Diode 1200 V 17 A 2-Pin TO-247 Package FFSH10120A-F085
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Frequently Asked Questions

The maximum continuous forward current of the FFSH10120A-F085 is 17 A.

This model has a peak reverse repetitive voltage rating of 1200 V.

The diode operates reliably within a temperature range of -55°C to 175°C.

It features a through-hole mounting type with a TO-247 package.

The peak non-repetitive forward surge current capacity is 850 A.

The dimensions are approximately 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width, with a diameter of 6.85 mm.

Yes, it is compliant with the AEC-Q101 automotive standard.

The maximum forward voltage drop is 1.75 V.

The peak reverse current is specified at 400 μA.

It is suitable for automotive HEV-EV onboard chargers and DC-DC converters, as well as industrial power conversion applications.

This model uses a single diode configuration.

Silicon Carbide technology offers superior switching performance, high reliability, and improved thermal performance, enabling efficient power conversion.

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