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| Country of Origin | China |
|---|---|
| Diameter | 6.85mm |
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | FFSH10120A-F085 |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 17A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 400μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A |
| Maximum Forward Voltage Vf | 1.75V |
| onsemi 1200 V 17 A Diode Schottky 2-Pin TO-247 FFSH10120A-F085Brand | onsemi |
onsemi FFSH10120A-F085 is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power semiconductor applications. Featuring a maximum continuous forward current of 17 A and a peak reverse repetitive voltage rating of 1200 V, this diode offers excellent switching characteristics with no reverse recovery current, making it highly efficient and suitable for fast switching frequencies.
This diode is housed in a 2-pin TO-247 package with through-hole mounting, providing ease of installation and reliable mechanical stability. It operates reliably across a temperature range from -55°C to a maximum of 175°C, enabling use in harsh industrial and automotive environments. The device is automotive compliant to the AEC-Q101 standard, ensuring suitability for hybrid and electric vehicle (HEV-EV) onboard chargers and DC-DC converters.
The FFSH10120A-F085's Silicon Carbide technology offers improved thermal performance and power density, enabling reduced system size and EMI while delivering higher efficiency. Its positive temperature coefficient and high surge current capacity enhance robustness in parallel configurations and transient conditions.
Package dimensions are approximately 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width, with a diameter of 6.85 mm. These dimensions ensure compatibility with standard industrial and automotive mounting hardware.
Silicon Carbide Schottky diode technology for next-generation power semiconductor performance. Peak reverse voltage rating of 1200 V ensures robust blocking capability. Maximum forward current of 17 A supports medium power applications.
Automotive AEC-Q101 compliant for demanding vehicular applications. Through hole TO-247 package provides durability and ease of assembly. High surge current capacity with 850 A peak non-repetitive forward surge current. Operating temperature range from -55°C to 175°C accommodates harsh conditions.
No reverse recovery current for reduced switching losses and EMI.
This diode is suitable for industrial power conversion uses including automotive electric vehicle systems, industrial power supplies, and other applications requiring high efficiency and thermal tolerance. Its design facilitates smaller, more efficient systems with improved reliability.
Explore more products in the Semiconductor category at EnvMart for comprehensive options to meet power electronics needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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