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onsemi Silicon Carbide Schottky Diode 650 V 25 A TO-247 2-Pin FFSH2065A

Category Schottky Diodes & Rectifiers Brand onsemi Condition New

Specifications

Country of Origin China
Diameter 6.85mm
Brand onsemi
Height 20.82mm
Length 15.87mm
Model FFSH2065A
Width 4.82mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Continuous Forward Current If 25A
Peak Reverse Repetitive Voltage Vrrm 650V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 600μA
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA
Maximum Forward Voltage Vf 1.75V
onsemi 650 V 25 A Diode Schottky 2-Pin TO-247 FFSH2065ABrand onsemi

Key Features

  • Features a maximum forward voltage of 1.75 V for efficient conduction.
  • Supports a peak reverse repetitive voltage of 650 V for robust blocking capability.
  • Designed with a 2-pin package mountable through-hole using TO-247 form factor.
  • Operates reliably in temperatures ranging from -55°C up to 175°C junction temperature.
  • Ideal for high-efficiency industrial power applications such as PFC, solar inverters, UPS, and EV chargers.
  • Constructed as a single diode with Schottky rectifier type, providing low forward voltage drop.
  • Supports surge currents up to 1.1 kA for transient load conditions.
  • Compact with dimensions approximately 20.82 mm height by 15.87 mm length and 4.82 mm width for efficient PCB layout.

Product Description

onsemi FFSH2065A Silicon Carbide (SiC) Schottky Diode is a high-performance power semiconductor device designed for efficient rectification and switching in demanding industrial and commercial applications. This diode supports a maximum continuous forward current of 25 A and a peak reverse repetitive voltage of 650 V, making it suitable for use in power factor correction circuits, solar power inverters, uninterruptible power supplies (UPS), electric vehicle chargers, and welding equipment.

Featuring a two-pin TO-247 through-hole package, this diode ensures ease of mounting and excellent thermal management. The maximum forward voltage of 1.75 V and peak surge current capacity of 1.1 kA provide robust and reliable performance under transient conditions. Its silicon carbide construction offers superior switching speed, minimal reverse recovery current, and excellent thermal stability up to 175°C junction temperature.

The device operates over a wide temperature range from -55°C to 175°C, making it versatile for harsh industrial environments. It exhibits a positive temperature coefficient contributing to protection against thermal runaway. The diode dimensions are compact with a height of 20.82 mm, length of 15.87 mm, width of 4.82 mm, and a diameter of 6.85 mm, facilitating easy integration into power electronic designs.

The FFSH2065A is a single Schottky diode with a 2-pin configuration optimized for high efficiency and lower electromagnetic interference (EMI). It carries no specific industry certifications but is designed to meet industrial quality standards. It is manufactured in China, ensuring consistent product quality.

Features maximum continuous forward current of 25 A for high load capacity. Maximum operating temperature up to 175°C for durable thermal performance. Designed with low forward voltage to reduce conduction losses. Silicon Carbide technology provides zero reverse recovery current for fast switching.

Suitable for power electronics in industrial, solar, automotive, and welding applications. Compact TO-247 package allows for ease of assembly and heatsinking. Peak reverse current of 600 μA ensures excellent blocking capabilities.

Operates at minimum temperatures down to -55°C ensuring broad environmental tolerance.

This onsemi diode is ideal for engineers and system designers seeking a reliable, high-efficiency power semiconductor for power control and conversion. Browse the Electronics & Electricals category at EnvMart for more semiconductor components and power rectifiers.

Explore more products in our Schottky Diodes & Rectifiers category.

onsemi Silicon Carbide Schottky Diode 650 V 25 A TO-247 2-Pin FFSH2065A
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Frequently Asked Questions

The maximum continuous forward current for this model is 25 A.

It supports a peak reverse repetitive voltage of 650 V.

The maximum forward voltage is 1.75 V, which aids in efficient conduction.

This diode operates reliably in temperatures ranging from -55°C to 175°C.

The dimensions are approximately 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width.

It is designed for through-hole mounting using the TO-247 form factor.

The peak non-repetitive forward surge current is rated at 1.1 kA.

The peak reverse current is 600 μA, ensuring excellent blocking capabilities.

It is constructed as a single diode with a Schottky rectifier type.

It is ideal for high-efficiency industrial power applications such as power factor correction, solar inverters, UPS, and electric vehicle chargers.

The FFSH2065A is manufactured in China.

Silicon carbide technology provides zero reverse recovery current for fast switching and excellent thermal stability.

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