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onsemi Silicon Carbide (SiC) 650 V 30 A Schottky Diode Single Rectifier 2-Pin TO-247 Package FFSH3065A

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onsemi Silicon Carbide (SiC) 650 V 30 A Schottky Diode Single Rectifier 2-Pin TO-247 Package FFSH3065A

Name: onsemi Silicon Carbide (SiC) 650 V 30 A Schottky Diode Single Rectifier 2-Pin TO-247 Package FFSH3065A
Brand: onsemi
SKU: 244761
Price: 8.38 USD
Availability: InStock

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Category Schottky Diodes & Rectifiers Brand onsemi Condition New

Specifications

Country of Origin	China
Diameter	6.85mm
Brand	onsemi
Height	20.82mm
Length	15.87mm
Model	FFSH3065A
Width	4.82mm
Mount Type	Through Hole
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	2
Maximum Continuous Forward Current If	30A
Peak Reverse Repetitive Voltage Vrrm	650V
Diode Configuration	Single
Rectifier Type	Schottky
Peak Reverse Current Ir	600μA
Peak Non-Repetitive Forward Surge Current Ifsm	1.13kA
Maximum Forward Voltage Vf	1.75V
onsemi 650 V 30 A Diode Schottky 2-Pin TO-247 FFSH3065ABrand	onsemi

Key Features

Constructed with advanced Silicon Carbide technology for improved switching performance.
Features a maximum continuous forward current of 30 A for robust power handling.
Offers low forward voltage drop of up to 1.75 V to increase efficiency.
Operates at maximum junction temperature of 175°C ensuring high thermal reliability.
Through-hole mount type with 2-pin single diode configuration for easy PCB integration.
Peak reverse repetitive voltage rated at 650 V for high voltage applications.
Minimal reverse recovery current enables faster switching speeds and reduced EMI.
Suitable for industrial power systems, solar, UPS, EV chargers, welding, and PFC circuits.

Product Description

onsemi FFSH3065A is a Silicon Carbide (SiC) Schottky diode designed for high efficiency and reliability in power semiconductor applications. It features a high peak reverse repetitive voltage of 650 V with a maximum continuous forward current rating of 30 A, making it well suited for demanding industrial and commercial use cases.

The device is housed in a TO-247 package suitable for through-hole mounting with two pins configured as a single diode. Its low maximum forward voltage of 1.75 V provides reduced power losses and improved overall system efficiency. Capable of operating at temperatures up to 175°C, this diode delivers exceptional thermal performance and surge current capability with a peak non-repetitive forward surge current of 1.13 kA.

This Schottky diode employs novel Silicon Carbide technology, eliminating reverse recovery current and offering temperature-independent switching characteristics. Such features lead to minimized electromagnetic interference (EMI), higher operating frequencies, increased power density, and reduced system size and cost.

Applications include Power Factor Correction (PFC), industrial power systems, solar power installations, uninterruptible power supplies (UPS), electric vehicle (EV) chargers, and welding equipment. The device’s high surge current capacity and positive temperature coefficient enhance operational robustness in challenging environments.

Manufactured in China, the onsemi FFSH3065A combines advanced semiconductor technology with durable construction to meet the needs of modern power electronics designs. Constructed with advanced Silicon Carbide technology for superior switching performance.

30 A continuous forward current rating supports high power applications. 650 V peak reverse voltage for heavy industrial uses. Low forward voltage of 1.75 V reduces energy losses. Thermal durability with operation up to 175°C junction temperature.

Through-hole TO-247 package ensures secure mounting and heat dissipation. No reverse recovery current enhances switching speed and efficiency. Wide application range including PFC, EV chargers, UPS, welding, and solar power.

Explore more onsemi Schottky diodes and related semiconductor components on EnvMart for your electronic and industrial needs.

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Frequently Asked Questions

The maximum continuous forward current rating of this model is 30 A, making it suitable for high power applications.

This diode has a peak reverse repetitive voltage rating of 650 V, which is suitable for high voltage applications.

The maximum operating temperature for the FFSH3065A is 175°C, ensuring high thermal reliability in various applications.

The FFSH3065A is housed in a TO-247 package, which is designed for through-hole mounting.

The maximum forward voltage drop for this model is 1.75 V, which helps to increase efficiency by reducing power losses.

The peak non-repetitive forward surge current for this diode is rated at 1.13 kA, providing robust surge handling capabilities.

This model has a length of 15.87 mm, a width of 4.82 mm, and a height of 20.82 mm.

The minimum operating temperature for the FFSH3065A is -55°C, allowing it to function in a wide range of environments.

This diode is suitable for applications including Power Factor Correction (PFC), industrial power systems, solar power installations, uninterruptible power supplies (UPS), electric vehicle (EV) chargers, and welding equipment.

The FFSH3065A features a 2-pin configuration as a single diode, facilitating easy integration into PCB designs.

The peak reverse current for this model is rated at 600 μA, which contributes to its efficiency and performance.

This diode is constructed with advanced Silicon Carbide (SiC) technology, which enhances its switching performance and efficiency.