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Wolfspeed Silicon Carbide 1200 V 4.5 A Surface Mount Schottky Diode 3-Pin DPAK C4D02120E

Category Schottky Diodes & Rectifiers Brand Wolfspeed Condition New

Specifications

Country of Origin India
Brand Wolfspeed
Height 2.39mm
Length 7.34mm
Model C4D02120E
Width 6.25mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Forward Current If 4.5A
Peak Reverse Repetitive Voltage Vrrm 1200V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 150μA
Peak Non-Repetitive Forward Surge Current Ifsm 18.8A
Maximum Forward Voltage Vf 3V

Key Features

  • This diode is surface mounted with a TO-252 package type.
  • It features a peak reverse repetitive voltage of 1200 V and a peak reverse current of 150 μA.
  • The maximum forward voltage drop is 3 V ensuring low power loss.
  • Operating temperature ranges from -55°C minimum to 175°C maximum for robust performance.
  • The diode provides extremely fast switching times with zero reverse recovery current.
  • It is constructed using Z-Rec™ Silicon Carbide technology for superior thermal conductivity.
  • Optimized for PFC boost diode applications and high-speed inverter circuits.
  • It has dimensions of length 7.34 mm, width 6.25 mm, and height 2.39 mm.

Product Description

Wolfspeed C4D02120E is a Silicon Carbide (SiC) Schottky diode designed for high efficiency and high voltage power electronics applications. With a maximum continuous forward current of 4.5 A and a peak reverse repetitive voltage of 1200 V, this diode is engineered to deliver reliable and efficient switching performance in demanding environments.

The diode is surface mount type housed in a TO-252 package that offers easy PCB assembly and thermal management. It operates within a temperature range of -55°C to 175°C, ensuring stability and durability for industrial and automotive applications.

Wolfspeed's Z-Rec™ technology provides a significant reduction in power-loss at high switching frequencies, coupled with a zero reverse recovery current, enabling faster switching with minimal losses. This makes it suitable for switch-mode power supplies, high-speed inverters, and power factor correction circuits.

The device dimensions of 7.34 mm length, 6.25 mm width, and 2.39 mm height allow compact designs, while the 3-pin DPAK configuration facilitates straightforward PCB mounting. The diode also withstands peak non-repetitive forward surge currents of up to 18.8 A, providing robustness against transient power spikes.

The Wolfspeed C4D02120E offers stable forward voltage drop of up to 3 V which contributes to improved energy efficiency and reduced heat generation, lowering cooling requirements. It doesn’t conform to specific automotive standards but is excellent for industrial semiconductor applications requiring high voltage and fast switching diodes.

This Schottky diode is optimized for power electronics including PFC boost diode designs and inverter applications. The SiC material ensures enhanced thermal conductivity and breakdown voltage, making it superior to traditional silicon diodes.

Zero recovery current and temperature independent switching behavior increase overall circuit efficiency. Dimensions and package type allow it to be integrated into various electronic assemblies efficiently. The diode can be parallel connected without risk of thermal runaway, improving scalability for power designs.

Wolfspeed products are widely used in industrial, power supply, manufacturing, and renewable energy sectors for reliable semiconductor device performance. Explore more Wolfspeed semiconductor components on EnvMart for your high-efficiency power design needs.

Explore more products in our Schottky Diodes & Rectifiers category.

Wolfspeed Silicon Carbide 1200 V 4.5 A Surface Mount Schottky Diode 3-Pin DPAK C4D02120E
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Frequently Asked Questions

The peak reverse repetitive voltage of this diode is 1200 V.

The maximum continuous forward current for this model is 4.5 A.

The dimensions of the TO-252 package are 7.34 mm in length, 6.25 mm in width, and 2.39 mm in height.

The maximum forward voltage drop is 3 V, which helps in reducing power loss.

The operating temperature range is from -55°C to 175°C.

The peak reverse current is specified at 150 μA.

Yes, it can withstand peak non-repetitive forward surge currents of up to 18.8 A.

This model is optimized for power factor correction (PFC) boost diode applications and high-speed inverter circuits.

This diode uses surface mount technology and is housed in a TO-252 package.

The diode configuration is single, suitable for various electronic assemblies.

It is constructed using Z-Rec™ Silicon Carbide technology, which enhances thermal conductivity and performance.

This diode provides extremely fast switching times with zero reverse recovery current, improving overall circuit efficiency.

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