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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.04mm |
| Length | 2.9mm |
| Model | MMBFJ270 |
| Width | 1.3mm |
| Mount Type | Surface |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Sub Type | JFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Drain Source Voltage Vds | 15V |
| Maximum Power Dissipation Pd | 225mW |
| Maximum Gate Source Voltage Vgs | 30V |
| Drain Source Current Ids | -2 to -15 mA |
onsemi MMBFJ270 is a single type P-Channel JFET transistor in a compact 3-pin SOT-23 surface mount package. Designed to handle a maximum drain source voltage of 15 V and drain source current ranging from -2 to -15 mA, this device is suitable for a wide variety of industrial and electronic applications. It supports a maximum gate source voltage of 30 V and can dissipate up to 225 mW of power, making it reliable for moderate power circuits.
The transistor operates efficiently within a temperature range from -55°C to 150°C, satisfying industrial and commercial requirements. Its precise single P-channel configuration allows for high-performance switching and amplification tasks in analog and digital circuits.
With compact physical dimensions of 2.9 mm length, 1.3 mm width, and 1.04 mm height, the MMBFJ270 fits well on densely populated printed circuit boards, enhancing space management in electronic designs. The surface mount SOT-23 package facilitates automated assembly and consistent manufacturing quality.
This discrete semiconductor component by onsemi is ideal for applications across electronic components, power management, instrumentation, and communication systems requiring precise, efficient switching with robust voltage and current ratings.
This JFET is designed for surface mount applications with a compact SOT-23 package. Maximum power dissipation is rated at 225 mW ensuring reliable performance. Operational temperature ranges from -55°C to 150°C for industrial use.
The device supports a maximum gate source voltage of 30 V. Its dimensions are 2.9 mm length, 1.3 mm width, and 1.04 mm height for space-efficient PCB design. The transistor is configured as a single P-channel JFET for precise switching operations.
It is ideal for use in electronic circuit components requiring Discrete Semiconductors. Explore more products in the Semiconductor category here on EnvMart for your industrial and technical needs.
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