$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS N-Channel MOSFET 25 A 700 V 3-Pin TO-220 IPP65R090CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP65R090CFD7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features a TO-220 package with 3 pins for through-hole mounting.
- Maximum continuous drain current of 25 amperes ensures efficient power handling.
- Drain source voltage rating of 700 volts provides robust voltage tolerance.
- Incorporates CoolMOS technology for enhanced efficiency and hard-commutation ruggedness.
- Maximum power dissipation is rated at 127 watts.
- Typical gate charge of 53 nanocoulombs at a gate-source voltage of 5 volts.
- Supports operating temperature range from -55°C to 150°C for industrial environments.
- Maximum gate-source voltage rating of ±20 volts prevents damage from high gate voltages.
Product Description
Infineon IPP65R090CFD7XKSA1 is a high-performance CoolMOS N-Channel MOSFET designed for demanding industrial applications requiring efficient power switching and high voltage tolerance. This transistor is housed in a TO-220 package with 3 pins and supports through-hole mounting, making it suitable for a variety of PCB layouts.
The device supports a maximum continuous drain current (Id) of 25 A and can withstand a maximum drain-source voltage (Vds) of 700 V. It delivers excellent hard-commutation ruggedness and includes an integrated fast body diode for improved switching performance.
The CoolMOS series technology used in this MOSFET enables significant efficiency improvements in power topologies such as resonant converters, industrial SMPS, server power supplies, telecom systems, solar power applications, and electric vehicle charging stations.
Key electrical characteristics include a maximum power dissipation of 127 W and a typical gate charge of 53 nC at a gate-source voltage of 5 V, enabling fast and efficient switching. The device is rated for a wide operating temperature range from -55°C to 150°C, ensuring reliable function in various industrial environments.
Its physical dimensions are approximately 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height, suited for compact electronic assemblies. Features a TO-220 package with 3 pins for through-hole mounting. Maximum continuous drain current of 25 amperes ensures efficient power handling.
Drain source voltage rating of 700 volts provides robust voltage tolerance. Incorporates CoolMOS technology for enhanced efficiency and ruggedness. Maximum power dissipation is rated at 127 watts. Typical gate charge of 53 nanocoulombs at a gate-source voltage of 5 volts.
Supports operating temperature from -55°C to 150°C for industrial environments. Maximum gate-source voltage rating of ±20 volts. Compact dimensions approximately 10.36 mm length, 4.57 mm width, and 9.45 mm height.
This MOSFET is widely used in industrial manufacturing, power management, renewable energy systems, and electric vehicle infrastructure, delivering efficiency and robustness for demanding semiconductor applications.
Explore more Infineon semiconductors and discrete electronic components at EnvMart for detailed technical data sheets and purchasing options.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 25 amperes.
This MOSFET has a drain-source voltage rating of 700 volts.
The typical gate charge at a gate-source voltage of 5 volts is 53 nanocoulombs.
The maximum power dissipation for this MOSFET is rated at 127 watts.
It supports an operating temperature range from -55°C to 150°C.
This model features a TO-220 package and supports through-hole mounting.
The dimensions are approximately 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.
The maximum gate-source voltage rating is ±20 volts.
It incorporates CoolMOS technology for enhanced efficiency and hard-commutation ruggedness.
This model is suitable for industrial applications, power management, renewable energy systems, and electric vehicle infrastructure.
The channel type of this MOSFET is N-channel.
The maximum drain-source resistance is rated at 900 milliohms.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
Recently Viewed Products
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent