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Infineon CoolMOS N-Channel MOSFET 15 A 700 V 3-Pin TO-247 IPW65R155CFD7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 21.5mm
Length 16.3mm
Model IPW65R155CFD7XKSA1
Width 5.3mm
Mount Type Through Hole
Series CoolMOS
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 15A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 155mΩ
Maximum Power Dissipation Pd 98W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • This MOSFET features a 15 amp maximum continuous drain current rating.
  • It operates at a maximum drain-source voltage of 700 volts.
  • The package type is TO-247 with 3 mounting pins for through-hole installation.
  • Maximum power dissipation is rated at 98 watts.
  • Operating temperature ranges from minus 55 degrees Celsius to 150 degrees Celsius.
  • Typical gate charge is 36 nanocoulombs at Vgs.
  • Maximum gate-source voltage is 20 volts ensuring safe operation.
  • The forward voltage drop is 1 volt for efficient conduction.

Product Description

Infineon IPW65R155CFD7XKSA1 CoolMOS N-Channel MOSFET is a high-performance power transistor supporting a maximum continuous drain current of 15 amperes and a maximum drain-source voltage of 700 volts. The 3-pin TO-247 package allows through-hole mount installation suitable for industrial and electronic applications.

This MOSFET integrates a fast body diode designed to optimize switching performance and increase efficiency in resonant high power topologies, making it ideal for use in power supply units, servers, telecommunications equipment, solar inverters, and electric vehicle charging stations. It offers excellent ruggedness against hard commutation and improved full-load and light-load efficiency in industrial switched-mode power supplies (SMPS).

Its maximum power dissipation rating of 98 watts and operating temperature range from -55°C to 150°C provide robustness for harsh and demanding environments. The typical gate charge of 36 nC at Vgs and the maximum gate-source voltage of 20 V aid in fast and controlled switching, while the low forward voltage of 1 V reduces conduction losses for enhanced energy efficiency.

Measuring approximately 21.5 mm in height, 16.3 mm in length, and 5.3 mm in width, this component is designed for through-hole mounting, facilitating reliable thermal and mechanical connection. It complies with no specific standards or automotive requirements.

This MOSFET supports high-efficiency power delivery for industrial electronics. Provides excellent ruggedness for hard-commutation scenarios. Enables significant efficiency improvements in SMPS designs. Designed for robust operation in temperatures from -55 to 150 degrees Celsius.

Ideal for applications in servers, telecom, solar, and EV infrastructure. Compact TO-247 package ensures ease of integration and heat dissipation. Low forward voltage of 1 V minimizes conduction losses. Gate drive requirements optimized with 36 nC typical gate charge.

Safe maximum gate-source voltage of 20 V guarantees reliable operation.

This product is well-suited for industrial, telecom, solar power, and electric vehicle charging applications where efficiency and reliability are critical. It aligns with professional engineering standards and specifications for power semiconductor devices.

Explore the comprehensive range of power MOSFETs available at EnvMart to find components tailored for demanding industrial and electronic environments.

Infineon CoolMOS N-Channel MOSFET 15 A 700 V 3-Pin TO-247 IPW65R155CFD7XKSA1
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Frequently Asked Questions

The maximum continuous drain current rating for this model is 15 amperes.

It operates at a maximum drain-source voltage of 700 volts.

This MOSFET comes in a TO-247 package type and is designed for through-hole mounting with 3 pins.

The maximum power dissipation for this unit is rated at 98 watts.

The operating temperature range for this model is from -55°C to 150°C.

The typical gate charge is 36 nanocoulombs at Vgs.

The maximum gate-source voltage is 20 volts, ensuring safe operation.

This model measures approximately 21.5 mm in height, 16.3 mm in length, and 5.3 mm in width.

The forward voltage drop is 1 volt, which helps in reducing conduction losses.

It is ideal for applications in power supply units, servers, telecommunications equipment, solar inverters, and electric vehicle charging stations.

This model features an N-channel configuration.

The maximum drain-source resistance is rated at 155 milliohms.

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