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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.5mm |
| Length | 16.3mm |
| Model | IPW65R155CFD7XKSA1 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 155mΩ |
| Maximum Power Dissipation Pd | 98W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPW65R155CFD7XKSA1 CoolMOS N-Channel MOSFET is a high-performance power transistor supporting a maximum continuous drain current of 15 amperes and a maximum drain-source voltage of 700 volts. The 3-pin TO-247 package allows through-hole mount installation suitable for industrial and electronic applications.
This MOSFET integrates a fast body diode designed to optimize switching performance and increase efficiency in resonant high power topologies, making it ideal for use in power supply units, servers, telecommunications equipment, solar inverters, and electric vehicle charging stations. It offers excellent ruggedness against hard commutation and improved full-load and light-load efficiency in industrial switched-mode power supplies (SMPS).
Its maximum power dissipation rating of 98 watts and operating temperature range from -55°C to 150°C provide robustness for harsh and demanding environments. The typical gate charge of 36 nC at Vgs and the maximum gate-source voltage of 20 V aid in fast and controlled switching, while the low forward voltage of 1 V reduces conduction losses for enhanced energy efficiency.
Measuring approximately 21.5 mm in height, 16.3 mm in length, and 5.3 mm in width, this component is designed for through-hole mounting, facilitating reliable thermal and mechanical connection. It complies with no specific standards or automotive requirements.
This MOSFET supports high-efficiency power delivery for industrial electronics. Provides excellent ruggedness for hard-commutation scenarios. Enables significant efficiency improvements in SMPS designs. Designed for robust operation in temperatures from -55 to 150 degrees Celsius.
Ideal for applications in servers, telecom, solar, and EV infrastructure. Compact TO-247 package ensures ease of integration and heat dissipation. Low forward voltage of 1 V minimizes conduction losses. Gate drive requirements optimized with 36 nC typical gate charge.
Safe maximum gate-source voltage of 20 V guarantees reliable operation.
This product is well-suited for industrial, telecom, solar power, and electric vehicle charging applications where efficiency and reliability are critical. It aligns with professional engineering standards and specifications for power semiconductor devices.
Explore the comprehensive range of power MOSFETs available at EnvMart to find components tailored for demanding industrial and electronic environments.
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