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Infineon CoolMOS N-Channel MOSFET, 15 A Continuous Drain Current, 700 V Drain-Source Voltage, 3-Pin TO-220 IPP65R155CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP65R155CFD7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 155mΩ |
| Maximum Power Dissipation Pd | 77W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- The device features a maximum power dissipation of 77 watts.
- Operating temperature range extends from -55°C to 175°C.
- Maximum drain-source resistance of 155 milliohms ensures efficient conduction.
- Designed for through-hole mounting with a compact 10.36 mm length.
- Typical gate charge at Vgs is 28 nanocoulombs for fast switching performance.
- Forward voltage is rated at 1 volt, supporting optimized efficiency.
- Integrates a fast body diode for rugged hard-commutation capabilities.
- Ideal for industrial applications including servers, telecom, solar, and EV charging stations.
Product Description
Infineon IPP65R155CFD7XKSA1 CoolMOS N-Channel MOSFET is a new semiconductor device rated for 15 A maximum continuous drain current and 700 V maximum drain-source voltage. Packaged in a 3-pin TO-220 through-hole mount format, it is designed for industrial power applications including servers, telecommunications, solar power systems, and electric vehicle charging stations.
With a maximum power dissipation of 77 watts and operating temperature range from -55°C to 175°C, this MOSFET provides robust performance under demanding conditions. The device's maximum drain-source resistance of 155 milliohms and typical gate charge of 28 nanocoulombs enable efficient switching and conduction, enhancing overall system efficiency.
The integrated fast body diode offers excellent ruggedness for hard-commutation, ensuring reliability in resonant high-power topologies. Its compact dimensions (10.36 mm length, 4.57 mm width, and 9.45 mm height) support high power density layouts. Forward voltage of 1 volt supports low conduction losses.
This MOSFET series offers extra design margins for increased bus voltage and delivers competitive performance against alternative market offerings. It significantly improves light-load and full-load efficiencies in industrial switched-mode power supplies (SMPS), making it ideal for industrial and commercial applications requiring high efficiency and reliability.
The device features a maximum power dissipation of 77 watts. Operating temperature range extends from -55°C to 175°C. Maximum drain-source resistance of 155 milliohms ensures efficient conduction. Designed for through-hole mounting with a compact 10.36 mm length.
Typical gate charge at Vgs is 28 nanocoulombs for fast switching performance. Forward voltage is rated at 1 volt, supporting optimized efficiency. Integrates a fast body diode for rugged hard-commutation capabilities. Ideal for industrial applications including servers, telecom, solar, and EV charging stations.
Enables improved light-load and full-load efficiency in industrial SMPS applications. Provides extra safety margin for designs with increased bus voltage. Explore similar electronic semiconductor components and discover efficient solutions suitable for power management in demanding industrial environments on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 A.
It has a maximum drain-source voltage rating of 700 V.
This MOSFET can dissipate a maximum power of 77 watts.
The operating temperature range extends from -55°C to 175°C.
It features a maximum drain-source resistance of 155 milliohms.
The typical gate charge at Vgs is 28 nanocoulombs.
The dimensions of this model are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.
This device is designed for through-hole mounting.
The forward voltage is rated at 1 volt.
It is ideal for industrial applications including servers, telecommunications, solar power systems, and electric vehicle charging stations.
Yes, it integrates a fast body diode for rugged hard-commutation capabilities.
The maximum gate-source voltage is 20 V.
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