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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP65R090CFD7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPP65R090CFD7XKSA1 CoolMOS N-Channel MOSFET is a high-performance discrete semiconductor device engineered to support demanding industrial applications requiring efficient power switching.
This 3-pin MOSFET features a TO-220 package, supporting a maximum continuous drain current of 25 amperes and a drain source voltage up to 700 volts, ensuring robust operation in high voltage circuits.
The device offers a maximum power dissipation of 127 watts and an ultra-low maximum drain source resistance of 900 milliohms, enabling improved efficiency and reduced power loss in resonant topologies.
Operating reliably within a temperature range of -55°C to 150°C, it includes an integrated fast body diode improving ruggedness against hard commutations, which enhances reliability in switching power supplies.
Its low typical gate charge of 53 nanocoulombs allows for faster switching speeds and reduces drive losses, making it ideal for industrial power supplies, server power systems, telecom equipment, solar inverters, and electric vehicle charging stations.
Offers a continuous drain current capacity of 25 amperes. Voltage rating of 700 volts for high voltage tolerance. Features a low maximum drain source resistance of 900 milliohms. Includes typical gate charge value of 53 nanocoulombs at Vgs.
Supports maximum power dissipation up to 127 watts. Operates reliably in temperatures from -55°C to a maximum of 150°C. Through-hole mount type suitable for robust industrial circuits. Compact TO-220 package with three pins for ease of integration.
Designed for industrial, server, telecom, solar, and EV-charging electronics.
This MOSFET’s excellent hard-commutation ruggedness provides an extra safety margin making it ideal for designs with increased bus voltage requirements. It enables increased power density and enhanced efficiency under light and full-load conditions.
This product is sourced new, originating from India. It is an ideal semiconductor choice for power management engineers and designers aiming to optimize industrial power electronic systems.
Explore more high-quality MOSFET products and power management components in the Electronics & Electricals category at EnvMart.
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