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Infineon OptiMOS™ N-Channel MOSFET 237 A 120 V 8-Pin HSOF-8 IPT030N12N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.4mm |
| Length | 10.1mm |
| Model | IPT030N12N3GATMA1 |
| Width | 10.58mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | HSOF-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 237A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 158nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 237 A for robust performance.
- Maximum drain source voltage of 120 V suitable for various electronic circuits.
- HSOF-8 package with 8 pins ensures reliable surface mounting.
- Maximum power dissipation rating of 375 W improves thermal management.
- Low maximum drain source resistance of 3 mΩ reduces energy losses.
- Typical gate charge of 158 nC at Vgs for efficient switching.
- Wide operating temperature range from -55 °C to 175 °C supports harsh environments.
- Designed under the OptiMOS™ series for balance between voltage margin and low resistance.
Product Description
Infineon IPT030N12N3GATMA1 OptiMOS™ N-Channel MOSFET is a high-performance semiconductor device engineered for demanding power switching applications. It features a maximum continuous drain current of 237 A and a maximum drain source voltage of 120 V, making it suitable for efficient power conversion and control in electronic systems.
Packaged in the compact HSOF-8 form factor with 8 pins, this MOSFET supports surface mounting on PCBs, minimizing board space while providing excellent thermal performance with a maximum power dissipation of 375 W. Its low drain source resistance of 3 mΩ ensures minimized conduction losses, enhancing overall system efficiency.
The device’s maximum gate source voltage rating is 20 V and typical gate charge at Vgs is 158 nC, enabling fast switching characteristics crucial for high-frequency applications. It operates reliably within a wide temperature range from -55 °C up to 175 °C, making it suitable for automotive, industrial, and battery-powered equipment applications.
As part of the OptiMOS™ series, this MOSFET provides an optimal balance between additional voltage breakdown margin and low on-state resistance, targeting use cases such as light electric vehicles, low voltage drives, and battery-powered tools.
High current capacity and voltage rating for demanding power electronics. Compact and efficient HSOF-8 package for optimal PCB layout. Excellent thermal management capabilities with high power dissipation. Low on-resistance reduces energy consumption and heat generation.
Wide operating temperature tolerance supporting harsh conditions.
This Infineon MOSFET is ideal for applications in industrial power control, automotive electronics, and energy-efficient devices requiring reliable and efficient switching components. EnvMart offers comprehensive product support to meet diverse engineering and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon OptiMOS™ N-Channel MOSFET is 237 A.
It has a maximum drain source voltage rating of 120 V, making it suitable for various electronic circuits.
This model is packaged in an HSOF-8 type with 8 pins, designed for surface mounting.
The maximum power dissipation rating is 375 W, which improves thermal management.
The typical gate charge at Vgs is 158 nC, which enables efficient switching characteristics.
It operates within a wide temperature range from -55 °C to 175 °C, supporting harsh environments.
The maximum gate source voltage rating is 20 V.
The maximum drain source resistance is 3 mΩ, which helps reduce energy losses.
The dimensions are 10.1 mm in length, 10.58 mm in width, and 2.4 mm in height.
It is suitable for applications in industrial power control, automotive electronics, and energy-efficient devices requiring reliable switching components.
This model belongs to the OptiMOS™ series, designed for a balance between voltage margin and low resistance.
This MOSFET has an N-channel type, which is commonly used for efficient power switching.
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